SI6459BDQ-T1 VISHAY [Vishay Siliconix], SI6459BDQ-T1 Datasheet
SI6459BDQ-T1
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SI6459BDQ-T1 Summary of contents
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... TSSOP Top View Ordering Information: Si6459BDQ-T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction) ...
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... Si6459BDQ Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain Source On State Resistance a Forward Transconductance a Diode Forward Voltage ...
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... V − Source-to-Drain Voltage (V) SD Document Number: 72518 S-32220—Rev. A, 03-Nov-03 New Product 1000 25_C J 0.8 1.0 1.2 Si6459BDQ Vishay Siliconix Capacitance 800 C iss 600 400 200 C oss C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...
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... Si6459BDQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0 250 mA D 0.2 0.0 −0.2 −0.4 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com 4 New Product −3 ...
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... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Document Number: 72518 S-32220—Rev. A, 03-Nov-03 New Product −2 − Square Wave Pulse Duration (sec) Si6459BDQ Vishay Siliconix 1 10 www.vishay.com 5 ...