SI6466ADQ-T1 VISHAY [Vishay Siliconix], SI6466ADQ-T1 Datasheet
SI6466ADQ-T1
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SI6466ADQ-T1 Summary of contents
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... TSSOP Top View Ordering Information: Si6466ADQ-T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction) ...
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... Si6466ADQ Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...
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... V - Source-to-Drain Voltage (V) SD Document Number: 71182 S-31725—Rev. B, 18-Aug-03 3000 2400 1800 1200 25_C J 0.8 1.0 1.2 Si6466ADQ Vishay Siliconix Capacitance C iss C oss 600 C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 8 ...
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... Si6466ADQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 - 0.0 - 0.2 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www ...
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Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...