K6R1008V1B SAMSUNG [Samsung semiconductor], K6R1008V1B Datasheet - Page 3

• Manufacturer Part Number: K6R1008V1B
• Description: 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges
• Manufacturer: SAMSUNG [Samsung semiconductor]

K6R1008V1B-C/B-L, K6R1008V1B-I/B-P
RECOMMENDED DC OPERATING CONDITIONS*
*
** V
*** V
DC AND OPERATING CHARACTERISTICS*
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*
* Capacitance is sampled and not 100% tested.
ABSOLUTE MAXIMUM RATINGS*
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
Input Leakage Current
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage Level
Output High Voltage Level
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Input/Output Capacitance
Input Capacitance
Voltage on Any Pin Relative to V
Voltage on V
Power Dissipation
Storage Temperature
Operating Temperature
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The above parameters are also guaranteed at industrial temperature range.
IL
IH
(Min) = -2.0V a.c(Pulse Width
(Max) = V
Parameter
Parameter
CC
CC +
Item
Supply Relative to V
2.0V a.c (Pulse Width
Parameter
(T
A
=25 C, f=1.0MHz)
Commercial
Industrial
6ns) for I 20mA.
SS
Symbol
SS
I
V
V
I
I
I
SB1
I
CC
6ns) for I
LO
SB
OH
LI
OL
Symbol
C
C
I/O
Symbol
IN
V
V
V
V
V
CS=V
V
Min. Cycle, 100% Duty
CS=V
I
Min. Cycle, CS=V
f=0MHz, CS V
V
I
I
OUT
OL
OH
CC
SS
IH
IL
20mA.
IN
OUT
IN
=8mA
=-4mA
= V
=0mA
V
= V
IH
IL,
CC
SS
or OE=V
V
-0.2V or V
SS
IN
to V
to V
= V
Test Conditions
CC
(T
Test Conditions
IH
CC
- 3 -
CC
V
-0.3**
IH
Symbol
A
Min
IH
V
or V
-0.2V,
V
IN
3.0
2.0
IN
=0 to 70 C, Vcc=3.3 0.3V, unless otherwise specified)
T
0
or WE=V
I/O
V
IN
, V
P
T
T
STG
CC
=0V
D
A
A
0.2V
=0V
IL,
OUT
(T
A
=0 to 70 C)
IL
Typ
3.3
0
-
-
Normal
L-Ver.
10ns
12ns
-0.5 to 4.6
-0.5 to 4.6
-65 to 150
MIN
8ns
-40 to 85
Rating
0 to 70
-
-
1.0
V
CC
Min
2.4
-2
-2
Max
-
-
-
-
-
-
-
3.6
+0.3***
0.8
PRELIMINARY
0
CMOS SRAM
Max
8
6
Preliminary
Max
160
155
150
0.7
0.4
50
2
2
5
-
Unit
W
August 1998
V
V
C
C
C
Unit
Unit
V
V
V
V
pF
pF
Unit
Rev 2.1
mA
mA
mA
V
V
A
A