K6R1008V1B SAMSUNG [Samsung semiconductor], K6R1008V1B Datasheet - Page 5

• Manufacturer Part Number: K6R1008V1B
• Description: 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges
• Manufacturer: SAMSUNG [Samsung semiconductor]

K6R1008V1B-C/B-L, K6R1008V1B-I/B-P
WRITE CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
TIMMING DIAGRAMS
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write Pulse Width(OE High)
Write Pulse Width(OE Low)
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
TIMING WAVEFORM OF READ CYCLE(1)
Address
Data Out
Parameter
Previous Valid Data
Symbol
t
t
t
t
t
t
t
t
t
WP1
WHZ
t
t
OW
WC
CW
AW
WP
WR
DW
AS
DH
Min
K6R1008V1B-8
(Address Controlled
8
6
0
6
6
8
0
0
4
0
3
t
OH
- 5 -
Max
t
AA
4
-
-
-
-
-
-
-
-
-
-
,
CS=OE=V
t
RC
K6R1008V1B-10
Min
10
10
7
0
7
7
0
0
5
0
3
IL
, WE=V
IH
Max
)
5
-
-
-
-
-
-
-
-
-
-
Valid Data
PRELIMINARY
K6R1008V1B-12
Min
12
12
CMOS SRAM
8
0
8
8
0
0
6
0
3
Preliminary
Max
6
-
-
-
-
-
-
-
-
-
-
August 1998
Rev 2.1
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns