K6R1008V1C SAMSUNG [Samsung semiconductor], K6R1008V1C Datasheet - Page 4

• Manufacturer Part Number: K6R1008V1C
• Description: 128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).
• Manufacturer: SAMSUNG [Samsung semiconductor]

K6R1008V1C-C/C-L, K6R1008V1C-I/C-P
AC CHARACTERISTICS
TEST CONDITIONS*
*
READ CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Chip Selection to Power Up Time
Chip Selection to Power DownTime
The a
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Reference Levels
Output Loads
bove test conditions are also applied at industrial temperature range.
D
Output Loads(A)
* Capacitive Load consists of all components of the
OUT
test environment.
Parameter
Z
O
= 50
Parameter
(T
A
=0 to 70 C, V
Symbol
R
t
t
t
t
t
t
t
t
t
t
OHZ
t
OLZ
L
CO
OH
RC
AA
OE
HZ
PU
PD
LZ
= 50
30pF*
CC
=3.3 0.3V, unless otherwise noted.)
K6R1008V1C-10
Min
V
10
3
0
0
0
3
0
-
-
-
-
L
= 1.5V
- 4 -
Max
10
10
10
5
5
5
-
-
-
-
-
Output Loads(B)
for t
HZ
K6R1008V1C-12
, t
Min
12
3
0
0
0
3
0
-
-
-
-
* Including Scope and Jig Capacitance
LZ
, t
WHZ
, t
Max
See below
OW
D
12
12
12
353
0V to 3V
6
6
6
-
-
-
-
-
OUT
Value
1.5V
, t
3ns
OLZ
& t
K6R1008V1C-15
Min
CMOS SRAM
OHZ
15
3
0
0
0
3
0
-
-
-
-
PRELIMINARY
PRELIMINARY
September 2001
Max
15
15
15
7
7
7
-
-
-
-
-
Revision 4.0
+3.3V
319
5pF*
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
P