K6R1008V1C SAMSUNG [Samsung semiconductor], K6R1008V1C Datasheet - Page 8

• Manufacturer Part Number: K6R1008V1C
• Description: 128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).
• Manufacturer: SAMSUNG [Samsung semiconductor]

DATA RETENTION WAVE FORM
DATA RETENTION CHARACTERISTICS*
* The above parameters are also guaranteed at industrial temperature range.
K6R1008V1C-C/C-L, K6R1008V1C-I/C-P
Data Retention Characteristic is for L-ver only.
Data Retention Current
Data Retention Set-Up Time
V
Recovery Time
CS controlled
CC
for Data Retention
V
3.0V
V
V
CS
GND
CC
IH
DR
Parameter
Symbol
t
t
V
I
SDR
RDR
DR
DR
t
SDR
CS V
V
V
V
V
See Data Retention
Wave form(below)
CC
IN
CC
IN
(T
=3.0V, CS V
=2.0V, CS V
V
V
CC
CC
CC
A
Test Condition
=0 to 70 C)
-0.2V
-0.2V or V
-0.2V or V
- 8 -
Data Retention Mode
CS V
CC
CC
IN
IN
-0.2V
-0.2V
0.2V
0.2V
CC
- 0.2V
Min.
2.0
0
5
-
-
Typ.
-
-
-
-
-
CMOS SRAM
t
RDR
PRELIMINARY
PRELIMINARY
Max.
3.6
0.4
0.3
September 2001
-
-
Revision 4.0
Unit
mA
ms
ns
V
P