K7R163684B_06 SAMSUNG [Samsung semiconductor], K7R163684B_06 Datasheet - Page 2

• Manufacturer Part Number: K7R163684B_06
• Description: 512Kx36 & 1Mx18 QDRTM II b4 SRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

K7R163684B
K7R161884B
Document Title
Revision History
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
512Kx36-bit,1Mx18-bit QDR
Rev. No.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
1.0
2.0
3.0
4.0
5.0
History
1. Initial document.
1. Change the Boundary scan exit order.
2. Correct the Overshoot and Undershoot timing diagram.
1. Change JTAG Block diagram
1. Add the speed bin (-25)
1. Correct the JTAG ID register definition
2. Correct the AC timing parameter (delete the tKHKH Max value)
1. Change the Maximum Clock cycle time.
2. Correct the 165FBGA package ball size.
1. Add the power up/down sequencing comment.
2. Update the DC current parameter (Icc and Isb).
3. Change the Max. speed bin from -33 to -30.
1. Change the ISB1.
1. Final spec release
1. Delete the x8 Org.
2. Delete the 300MHz speed bin
1. Add the Industrial temp. & Lead Free Package
1. Add the 300MHz speed bin
1. Change Vss/SA to NC/SA in Pin Configuration
Speed Bin
-30
-25
-20
-16
From
200
180
160
140
TM
II b4 SRAM
230
210
190
170
512Kx36 & 1Mx18 QDR
To
- 2 -
Oct. 17. 2002
Dec. 16, 2002
Dec. 26, 2002
Jan. 27, 2003
Mar. 20, 2003
April. 4, 2003
June. 20, 2003
Oct. 20. 2003
Oct. 31, 2003
Nov. 28, 2003
Nov. 10. 2004
Mar. 29. 2006
Jul. 26 2006
Draft Date
Rev. 5.0 July 2006
TM
II b4 SRAM
Advance
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Final
Final
Final
Final
Final
Remark