K7R643682M_07 SAMSUNG [Samsung semiconductor], K7R643682M_07 Datasheet - Page 2

• Manufacturer Part Number: K7R643682M_07
• Description: 2Mx36 & 4Mx18 & 8Mx9 QDR II b2 SRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

Document Title
Revision History
K7R643682M
K7R641882M
K7R640982M
2Mx36-bit, 4Mx18-bit, 8Mx9-bit QDR
Rev. No.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
1.0
1.1
1.2
1.3
History
1. Initial document.
1. Update AC timing characteristics.
2. Change the JTAG instruction coding.
1. Change the AC timing characteristics. (-25/-20 parts)
2. Correct the overshoot and undershoot timing diagrams.
3. Change the JTAG Block diagrams.
4. Update the Boundary scan exit order.
1. Correct the JTAG ID register definition
2. Correct the AC timing parameter (delete the tKHKH Max value)
1. Add the Power-on Sequence specification
1. Correct the pin name table
1. Update the power consumption (Icc & Isb)
1. Finalize the datasheet
1. Add Pb-free comment
2. Change the Max. clock cycle time in AC TIMING CHARACTERIS-
TICS
1. Correct the pin name table
1. Add Detail Specification of Power up Sequence
2Mx36 & 4Mx18 & 8Mx9 QDR
TM
II b2 SRAM
- 2 -
Sep, 14 2002
Oct. 24, 2002
Feb. 18, 2003
Mar. 20, 2003
Aug. 16, 2004
Oct. 18, 2004
May. 17, 2005
Aug. 2, 2005
Jul. 6, 2006
Jan. 23, 2007
Mar. 5, 2007
Draft Date
Rev. 1.3 March 2007
TM
II b2 SRAM
Advance
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Final
Final
Final
Final
Remark