K7R643682M_07 SAMSUNG [Samsung semiconductor], K7R643682M_07 Datasheet - Page 3

• Manufacturer Part Number: K7R643682M_07
• Description: 2Mx36 & 4Mx18 & 8Mx9 QDR II b2 SRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

FUNCTIONAL BLOCK DIAGRAM
FEATURES
D (Data in)
ADDRESS
R
W
BW
K
K
C
C
2Mx36-bit, 4Mx18-bit, 8Mx9-bit QDR
• 1.8V+0.1V/-0.1V Power Supply.
• DLL circuitry for wide output data valid window and future fre-
• I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/
• Separate independent read and write data ports
• HSTL I/O
• Full data coherency, providing most current data.
• Synchronous pipeline read with self timed early write.
• Registered address, control and data input/output.
• DDR (Double Data Rate) Interface on read and write ports.
• Fixed 2-bit burst for both read and write operation.
• Clock-stop supports to reduce current.
• Two input clocks (K and K) for accurate DDR timing at clock
• Two input clocks for output data (C and C) to minimize
• Two echo clocks (CQ and CQ) to enhance output data
• Single address bus.
• Byte write function.
• Separate read/write control pin (R and W)
• Simple depth expansion with no data contention.
• Programmable output impedance.
• JTAG 1149.1 compatible test access port.
• 165FBGA(11x15 ball array FBGA) with body size of 15x17mm
Notes: 1. Numbers in ( ) are for x18 device, x9 device also the same with appropriate adjustments of depth and width.
K7R643682M
K7R641882M
K7R640982M
& Lead Free
with concurrent read and write operation
quency scaling.
-0.1V for 1.8V I/O.
rising edges only.
clock-skew and flight-time mismatches.
traceability.
X
QDR SRAM and Quad Data Rate comprise a new family of products developed by Cypress, Renesas, IDT, NEC and Samsung technology.
20 (or 21, 22)
36 (or 18, 9)
4(or 2)
LOGIC
DATA
CTRL
REG
ADD
REG
GEN
CLK
(or 21,22)
20
36 (or 18,9)
SELECT OUTPUT CONTROL
2Mx36 & 4Mx18 & 8Mx9 QDR
WRITE DRIVER
MEMORY
(4Mx18)
ARRAY
2Mx36
TM
- 3 -
II b2 SRAM
* -F(E)C(I)
36 (or 18, 9)
Org.
X36
X18
X9
F(E) [Package type]: E-Pb Free, F-Pb
C(I) [Operating Temperature]: C-Commercial, I-Industrial
K7R643682M-F(E)C(I)25
K7R643682M-F(E)C(I)20
K7R643682M-F(E)C(I)16
K7R641882M-F(E)C(I)25
K7R641882M-F(E)C(I)20
K7R641882M-F(E)C(I)16
K7R640982M-F(E)C(I)25
K7R640982M-F(E)C(I)20
K7R640982M-F(E)C(I)16
(or 36,
18)
Number
72
Part
(or 36,
18)
72
Rev. 1.3 March 2007
Cycle
Time
4.0
5.0
6.0
4.0
5.0
6.0
4.0
5.0
6.0
TM
Access
Time
0.45
0.45
0.50
0.45
0.45
0.50
0.45
0.45
0.50
II b2 SRAM
(Echo Clock out)
36 (or 18, 9)
Q (Data Out)
Unit
CQ, CQ
ns
ns
ns
ns
ns
ns
ns
ns
ns
RoHS
Avail.
√
√
√
√
√
√
•
•
•