TA1360AFG_05 TOSHIBA [Toshiba Semiconductor], TA1360AFG_05 Datasheet - Page 79
TA1360AFG_05
Manufacturer Part Number
TA1360AFG_05
Description
YCbCr/YPbPr Signal and Sync Processor for Digital TV, Progressive Scan TV and Double Scan TV
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.TA1360AFG_05.pdf
(110 pages)
- Current page: 79 of 110
- Download datasheet (2Mb)
Note
T03
T04
T05
T06
T07
T08
No.
Characteristics
Unicolor
adjustment
characteristic
Brightness
adjustment
characteristic
White peak
slice level
Black peak
slice level
RGB output
S/N
Halftone
characteristic
SW68
A
A
C
C
C
A
SW67
B
B
B
B
B
B
SW66
B
B
B
B
B
B
SW26
A
A
A
A
A
A
Test Conditions
SW Mode
SW25
A
A
A
A
A
A
SW24
A
A
A
A
A
A
SW21
A
A
A
A
A
A
SW19
A
A
A
A
A
A
SW18
A
A
A
A
A
A
79
1.
2.
3.
1.
2.
1.
2.
3.
4.
1.
2.
1.
2.
3.
4.
1.
2.
3.
4.
5.
6.
7.
Input signal 1 (f
Change unicolor data to maximum (7F), center (40), and minimum (00) and measure pin 12
picture period amplitude, V
Calculate amplitude ratio of V
Input signal 2 from pin 68 and adjust pin 12 picture period output amplitude to 1 Vp-p.
Change brightness data to maximum (7F), center (80), and minimum (00) and measure pin
12 voltages, V
Set subcontrast to maximum.
Apply external power supply to pin 68 and gradually increase voltage from 5.8 V.
When picture period of pin 12 is clipped, measure pin 12 picture period amplitude voltage,
V
Change subaddress (0C) data to (FC) and repeat the steps 1 to 3 above. (V
Apply external power supply to pin 68 and gradually decrease voltage from 5.8 V.
When picture periods are clipped, measure pins 14, 13, and 12 voltage, V
Adjust brightness data so that picture period voltage of pin 14 is 2.4 V.
Set color data to minimum.
Measure noise levels n14-, n13-, and n12-Vp-p in picture period of pin 14, 13, and 12 with an
oscilloscope.
Calculate S/N.
Input signal 1 (f
Measure pin 14 picture period amplitude v14A.
Apply 1.5 V to pin 79 from external power supply.
Measure pin 14 picture period amplitude v14B
Calculate the following equation. G
Stop applying voltage to pin 79. Set subaddress (1A) to data (E2) and measure pin 14-picture
period amplitude, v14C.
Calculate the following equation. G
wps1
.
N
N
N
14
13
12
= −20 × og
= −20 × og
= −20 × og
brMAX
0
0
= 100 kHz, picture period amplitude = 0.2 Vp-p) from pin 68.
= 100 kHz, picture period amplitude 0.2 Vp-p) from pin 68.
l
l
l
, V
brCNT
[2.3/(0.2 × n14)]
[2.3/(0.2 × n13)]
[2.3/(0.2 × n12)]
uMAX
, and V
uMAX
, V
uCNT
and V
brMIN
HT1
HT2
Test Method
, and V
= v14B/v14A
= v414C/v14A
uMIN
respectively.
in decibels (∆V
uMIN
respectively.
u
)
TA1360AFG
bps
wps2
.
2005-08-18
)
Related parts for TA1360AFG_05
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
TOSHIBA Bi-CMOS Digital Integrated Circuit Silicon Monolithic
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [Power Module]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet: