TA1360AFG_05 TOSHIBA [Toshiba Semiconductor], TA1360AFG_05 Datasheet - Page 93
TA1360AFG_05
Manufacturer Part Number
TA1360AFG_05
Description
YCbCr/YPbPr Signal and Sync Processor for Digital TV, Progressive Scan TV and Double Scan TV
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.TA1360AFG_05.pdf
(110 pages)
- Current page: 93 of 110
- Download datasheet (2Mb)
Note
T36
No.
Characteristics
Blue stretch
point/gain
SW68
A
SW67
B
SW66
B
SW26
A
Test Conditions
SW Mode
SW25
A
SW24
A
SW21
A
SW19
A
SW18
A
93
1.
2.
3.
4.
5.
6.
7.
8.
Note: Calculate blue stretch start point in IRE as setting positive amplitude at pedestal level of
Input RAMP signal 0.7 Vp-p from pin 68.
Set subcontrast data to maximum.
Set subaddress (15) data to (0C).
Set subaddress (1A) data to (C0), monitor pin 14, and measure blue stretch start point using
the figure below (BLP
Set subaddress (1A) data to (CC), and repeat the step 4 above. (BLP
Set subaddress (1A) data to (C4).
Monitor pin 14 and measure gradient at blue stretch ON in decibel in relation to the one at
blue stretch OFF according to the figure below. (BLG
Set subaddress (15) data to (04), and repeat the step 7 above. (BLG
output signal to 2.3 Vp-p = 100 IRE.
Output amplitude
min
).
Test Method
max
)
Blue stretch OFF
min
Blue stretch ON
max
)
TA1360AFG
)
Input amplitude
2005-08-18
Related parts for TA1360AFG_05
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
TOSHIBA Bi-CMOS Digital Integrated Circuit Silicon Monolithic
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [Power Module]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet: