HMC565LC5_09 HITTITE [Hittite Microwave Corporation], HMC565LC5_09 Datasheet

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HMC565LC5_09

Manufacturer Part Number
HMC565LC5_09
Description
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 6 - 20 GHz
Manufacturer
HITTITE [Hittite Microwave Corporation]
Datasheet
8 - 178
8
Typical Applications
The HMC565LC5 is ideal for use as a LNA or driver
amplifi er for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment and Sensors
• Military & Space
Functional Diagram
Electrical Specifi cations,
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Total Supply Current (Idd)(Vdd = +3V)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Parameter
T
A
v02.0209
= +25° C, Vdd 1, 2, 3 = +3V
Order On-line at www.hittite.com
Min.
19
8
Features
Noise Figure: 2.5 dB
Gain: 21 dB
OIP3: 20 dBm
Single Supply: +3V @ 53 mA
50 Ohm Matched Input/Output
RoHS Compliant 5 x 5 mm Package
General Description
The HMC565LC5 is a high dynamic range GaAs
PHEMT MMIC Low Noise Amplifi er housed in a
leadless RoHS compliant 5x5mm SMT package.
Operating
features 21 dB of small signal gain, 2.5 dB noise
fi gure and IP3 of +20 dBm across the operating
band. This self-biased LNA is ideal for microwave
radios due to its single +3V supply operation, and DC
blocked RF I/O’s.
6 - 12
0.025
Typ.
2.5
20
53
21
15
13
10
11
GaAs SMT PHEMT LOW NOISE
0.035
Max.
2.8
75
from 6 to 20 GHz, the HMC565LC5
AMPLIFIER, 6 - 20 GHz
Min.
16
9
HMC565LC5
12 - 20
0.025
18.5
Typ.
2.5
12
15
11
13
21
53
0.035
Max.
75
3
dB/ °C
Units
GHz
dBm
dBm
dBm
mA
dB
dB
dB
dB

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HMC565LC5_09 Summary of contents

Page 1

Typical Applications The HMC565LC5 is ideal for use as a LNA or driver amplifi er for: • Point-to-Point Radios • Point-to-Multi-Point Radios & VSAT • Test Equipment and Sensors • Military & Space Functional Diagram Electrical Specifi cations, Parameter ...

Page 2

Broadband Gain & Return Loss S21 S11 S22 0 -10 -20 - FREQUENCY (GHz) Input Return Loss vs. Temperature 0 +25C -5 +85C -40C -10 -15 -20 - ...

Page 3

P1dB vs. Temperature FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 -10 -20 -30 -40 -50 - FREQUENCY (GHz) For price, delivery, and to place orders, ...

Page 4

Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2, Vdd3) +3.5 Vdc RF Input Power (RFIN)(Vdd = +3.0 Vdc) 0 dBm Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) 0.753 W (derate 8.5 mW/°C above 85 °C) Thermal Resistance ...

Page 5

Pin Descriptions Pin Number Function 19 25, 27, N/C 29, 31 20, 22 GND 4 RFIN 21 RFOUT 30, 28, 26 Vdd1 Application Circuit Component Value C1, C2, ...

Page 6

Evaluation PCB List of Materials for Evaluation PCB 110431 Item Description PCB Mount K Connector Header 100 pF Capacitor, 0402 Pkg 2.2 μF Capacitor, Tantalum U1 ...

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