HMC565LC5_09 HITTITE [Hittite Microwave Corporation], HMC565LC5_09 Datasheet - Page 4

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HMC565LC5_09

Manufacturer Part Number
HMC565LC5_09
Description
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 6 - 20 GHz
Manufacturer
HITTITE [Hittite Microwave Corporation]
Datasheet
Absolute Maximum Ratings
Outline Drawing
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
RF Input Power (RFIN)(Vdd = +3.0 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 8.5 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
+3.5 Vdc
0 dBm
175 °C
0.753 W
119.5 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
v02.0209
Order On-line at www.hittite.com
Typical Supply Current vs. Vdd
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES
3. DIMENSIONS ARE IN INCHES [MILLIMETERS]
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
GOLD OVER 50 MICROINCHES MINIMUM NICKEL
SOLDERED TO PCB RF GROUND
GaAs SMT PHEMT LOW NOISE
Vdd (Vdc)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
+3.5
+2.5
+3.0
AMPLIFIER, 6 - 20 GHz
HMC565LC5
Idd (mA)
51
53
56
8 - 181
8

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