HMC580ST89_10 HITTITE [Hittite Microwave Corporation], HMC580ST89_10 Datasheet - Page 3

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HMC580ST89_10

Manufacturer Part Number
HMC580ST89_10
Description
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1 GHz
Manufacturer
HITTITE [Hittite Microwave Corporation]
Datasheet
8 - 148
8
P1dB vs. Temperature
Output IP3 vs. Temperature
Vcc vs. Icc Over Temperature for
Fixed Vs= 5V, R
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
26
24
22
20
18
16
14
12
10
45
40
35
30
25
20
94
92
90
88
86
84
82
80
78
8
6
4
2
0
4.82
0
0
+85C
0.25
0.3
4.83
Phone: 978-250-3343
0.5
0.5
BIAS
FREQUENCY (GHz)
FREQUENCY (GHz)
4.84
= 1.8 Ohms
+25C
Vcc (V)
Application Support: Phone: 978-250-3343 or apps@hittite.com
0.75
0.8
4.85
+25C
+85C
+25C
+85C
1
-40C
1
-40C
v04.0710
4.86
1.25
1.3
-40C
Fax: 978-250-3373
4.87
1.5
1.5
Psat vs. Temperature
Gain, Power & OIP3 vs. Supply Voltage
for Constant Icc = 88 mA @ 850 MHz
ACPR vs. Channel Output Power
HMC580ST89 / 580ST89E
Order On-line at www.hittite.com
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
28
24
20
16
12
36
32
28
24
20
16
12
8
4
0
8
4
0
4.5
MMIC AMPLIFIER, DC - 1 GHz
0
2
4
0.25
InGaP HBT GAIN BLOCK
CHANNEL OUTPUT POWER (dBm)
6
CDMA2000 140MHz
CDMA2000 400MHz
WCDMA 140MHz
WCDMA 400MHz
0.5
FREQUENCY (GHz)
8
Vs (V)
0.75
10
5
Gain
P1dB
Psat
IP3
12
+25C
+85C
-40C
1
14
1.25
16
1.5
5.5
18

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