HMC591_09 HITTITE [Hittite Microwave Corporation], HMC591_09 Datasheet
HMC591_09
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HMC591_09 Summary of contents
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Typical Applications The HMC591 is ideal for use as a power amplifi er for: • Point-to-Point Radios 3 • Point-to-Multi-Point Radios • Test Equipment & Sensors • Military End-Use • Space Functional Diagram Electrical Specifi cations, Parameter Frequency Range Gain ...
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Broadband Gain & Return Loss S21 S11 5 S22 0 -5 -10 -15 -20 - FREQUENCY (GHz) Input Return Loss vs. Temperature 0 +25C -5 +85C -40C ...
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P1dB vs. Current 6.5 7 7.5 FREQUENCY (GHz) Output IP3 vs. Temperature 7V @ 940 mA, Pin/Tone = -15 dBm 6.5 7 7.5 FREQUENCY (GHz) ...
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Gain & Power vs. Supply Voltage @ 8 GHz 38 34 GAIN 30 P1dB Psat 6.5 7 Vdd SUPPLY VOLTAGE (V) Reverse Isolation vs. Temperature 1340 mA 0 -10 -20 +25C +85C -40C -30 ...
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Outline Drawing 3 Die Packaging Information Standard GP-1 (Gel Pack) [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders, please contact Hittite ...
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Pad Descriptions Pad Number Function 1 RFIN Power Supply Voltage for the amplifi er. External bypass Vdd 1-5 capacitors of 100 pF and 0.1 μF are required. 6 RFOUT Gate control for amplifi er. ...
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Assembly Diagram 3 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 v02.0109 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER GHz ...
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Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) ...