HMC593LP3E HITTITE [Hittite Microwave Corporation], HMC593LP3E Datasheet

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HMC593LP3E

Manufacturer Part Number
HMC593LP3E
Description
GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
Manufacturer
HITTITE [Hittite Microwave Corporation]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HMC593LP3E
Manufacturer:
MEANWELL
Quantity:
5 000
Part Number:
HMC593LP3E
Manufacturer:
ADI/亚德诺
Quantity:
20 000
Part Number:
HMC593LP3ETR
Manufacturer:
HITTITE
Quantity:
1 400
8 - 190
8
Typical Applications
The HMC593LP3(E) is ideal for:
• Wireless Infrastructure
• Fixed Wireless
• WiMAX WiBro / 4G
• Tower Mounted Amplifi ers
Functional Diagram
Electrical Specifi cations,
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Power for 1dB Compression (P1dB)*
Saturated Output Power (Psat)
Third Order Intercept (IP3)*
(-20 dBm Input Power per tone,
1 MHz tone spacing)
Supply Current (Idd)
* P1dB and IP3 for LNA Mode are referenced to RFOUT while P1dB for Bypass Mode is referenced to RFIN.
Switching
Speed
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
LNA Mode to Bypass Mode
Bypass Mode to LNA Mode
Parameter
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
T
Min.
A
14
10
v03.0309
= +25° C
LNA Mode
Order On-line at www.hittite.com
0.011
Typ.
13.5
428
1.4
23
39
22
20
17
12
13
AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
Max.
Vdd = +3V
1.8
25
Min.
-3
Bypass Mode
HMC593LP3
0.002
Typ.
0.01
343
30
25
30
-2
Features
Noise Figure: 1.2 dB
Output IP3: +29 dBm
Gain: 19 dB
Low Loss LNA Bypass Path
Single Supply: +3V or +5V
50 Ohm Matched Output
General Description
The HMC593LP3(E) is a versatile, high dynamic
range GaAs MMIC Low Noise Amplifi er that
integrates a low loss LNA bypass mode on the IC.
The amplifi er is ideal for WiBro & WiMAX receivers
operating between 3.3 and 3.8 GHz and provides
1.2 dB noise fi gure, 19 dB of gain and +29 dBm IP3
from a single supply of +5V @ 40mA. Input and output
return losses are 23 and 13 dB respectively with no
external matching components required. A single
control line (0/Vdd) is used to switch between LNA
mode and a low 2 dB loss bypass mode reducing the
current consumption to 10 μA.
GaAs PHEMT MMIC LOW NOISE
Max.
3.3 - 3.8
Min.
16
13
LNA Mode
0.011
Typ.
428
1.2
23
36
29
40
19
13
16
17
Max.
Vdd = +5V
1.6
50
/
Min.
-3
Bypass Mode
593LP3E
0.002
Typ.
0.01
343
30
25
30
-2
Max.
dB / °C
Units
dBm
dBm
dBm
GHz
mA
dB
dB
dB
dB
dB
ns
ns

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