HMC593LP3E HITTITE [Hittite Microwave Corporation], HMC593LP3E Datasheet - Page 6

• Manufacturer Part Number: HMC593LP3E
• Description: GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
• Manufacturer: HITTITE [Hittite Microwave Corporation]

Bypass Mode, Psat vs. Temperature
Outline Drawing
Package Information
[1] Max peak refl ow temperature of 235 °C
[2] Max peak refl ow temperature of 260 °C
[3] 4-Digit lot number XXXX
HMC593LP3E
-1
-2
-3
-4
-5
HMC593LP3
Part Number
0
3.3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
3.4
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
RoHS-compliant Low Stress Injection Molded Plastic
FREQUENCY (GHz)
3.5
Low Stress Injection Molded Plastic
+25C
+85C
Package Body Material
-40C
3.6
v03.0309
3.7
Order On-line at www.hittite.com
AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
3.8
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
Typical Supply Current vs. Vdd
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)
(Vdd = +5.0 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 13 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
100% matte Sn
GaAs PHEMT MMIC LOW NOISE
Sn/Pb Solder
Lead Finish
HMC593LP3 / 593LP3E
Vdd (V)
+2.4
+2.7
+3.0
+4.5
+5.0
+5.5
MSL Rating
MSL1
MSL1
Bypass Mode
[1]
[2]
LNA Mode
Package Marking
+15 dBm
+30 dBm
150 °C
850 mW
76.9 °C/W
-65 to +150° C
-40 to +85° C
Class 1A
Idd (mA)
+8 V
12
16
33
39
44
9
XXXX
XXXX
593
593
[3]
8 - 195
8