K4X51163PE-L SAMSUNG [Samsung semiconductor], K4X51163PE-L Datasheet - Page 12
![no-image](/images/no-image-200.jpg)
K4X51163PE-L
Manufacturer Part Number
K4X51163PE-L
Description
32Mx16 Mobile DDR SDRAM
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K4X51163PE-L.pdf
(20 pages)
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K4X51163PE - L(F)E/G
13. AC Operating Conditions & Timming Specification
NOTE :
1) These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in simulation.
2) The value of V
Input High (Logic 1) Voltage, all inputs
Input Low (Logic 0) Voltage, all inputs
Input Crossing Point Voltage, CK and CK inputs
IX
Parameter/Condition
is expected to equal 0.5*V
DDQ
of the transmitting device and must track variations in the DC level of the same.
VIH(AC)
Symbol
VIL(AC)
VIX(AC)
- 15 -
0.8 x VDDQ
0.4 x VDDQ
Min
-0.3
0.2 x VDDQ
0.6 x VDDQ
VDDQ+0.3
Max
Mobile DDR SDRAM
Unit
V
V
V
June 2007
Note
1
1
2
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