HM117 HSMC [Hi-Sincerity Mocroelectronics], HM117 Datasheet

no-image

HM117

Manufacturer Part Number
HM117
Description
PNP EPITAXIAL PLANAR TRANSISTOR
Manufacturer
HSMC [Hi-Sincerity Mocroelectronics]
Datasheet
HM117
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HM117 is designed for use in general purpose amplifier and low-speed
switching applications.
Absolute Maximum Ratings
Electrical Characteristics
HM117
Maximum Temperatures
Maximum Power Dissipation
Maximum Voltages and Currents
Storage Temperature ................................................................... -55 ~ +150 C
Junction Temperature .......................................................... +150 C Maximum
Total Power Dissipation (T
Total Power Dissipation
(Printed circuit board 2mm thick, collector plating 1cm
BV
BV
BV
I
I
C
C
Collector Current (Continue) ............................................................................................................................ -4 A
Collector Current (Peak) .................................................................................................................................. -6 A
CBO
CEO
EBO
Symbol
*V
*V
BV
BV
*h
*h
Cob
I
I
I
CBO
CEO
EBO
CE(sat)
BE(on)
Emitter to Base Voltage............................................................................................................................. -5 V
Collector to Base Voltage...................................................................................................................... -100 V
Collector to Emitter Voltage................................................................................................................... -100 V
FE1
FE2
CBO
CEO
-100
-100
Min.
500
1
HI-SINCERITY
MICROELECTRONICS CORP.
-
-
-
-
-
-
A
=25 C) ................................................................................................................... 1.2 W
Typ.
-
-
-
-
-
-
-
-
-
-
(T
A
=25 C)
(T
A
=25 C)
Max.
-2.5
-2.8
200
-1
-2
-2
-
-
-
-
2
square or larger) ....................................................... 1.6 W
Unit
mA
mA
mA
pF
V
V
V
V
K
I
I
V
V
V
I
I
I
I
V
C
C
C
C
C
C
CB
CE
EB
CB
=-1mA
=-30mA
=-2A, I
=-2A, V
=-1A, V
=-2A, V
=-5V
=-100V
=-50V
=-10V, f=0.1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle 2%
B
=-8mA
CE
CE
CE
=-4V
=-4V
=-4V
Test Conditions
Darlington Schematic
B
Spec. No. : HM200101
Issued Date : 2001.07.30
Revised Date : 2004.12.21
Page No. : 1/5
HSMC Product Specification
R1
SOT-89
R2
C
E

Related parts for HM117

HM117 Summary of contents

Page 1

... HI-SINCERITY MICROELECTRONICS CORP. HM117 PNP EPITAXIAL PLANAR TRANSISTOR Description The HM117 is designed for use in general purpose amplifier and low-speed switching applications. Absolute Maximum Ratings Maximum Temperatures Storage Temperature ................................................................... -55 ~ +150 C Junction Temperature .......................................................... +150 C Maximum Maximum Power Dissipation Total Power Dissipation (T =25 C) ................................................................................................................... 1 ...

Page 2

... Collector Current-I Switching Time & Collector Current 10 V =30V, I =250I =-250I Tstg 1 Tf Ton 0.1 1 Collector Current (A) HM117 100000 hFE @ V CE =4V 1000 10000 (mA) C 10000 =100I BE(sat 10000 (mA) C 1000 10 Spec. No. : HM200101 Issued Date : 2001.07.30 Revised Date : 2004 ...

Page 3

... HI-SINCERITY MICROELECTRONICS CORP. Safe Operating Area 100000 PT=1ms 10000 PT=100ms PT=1s 1000 100 Forward Voltage-V HM117 100 1000 (V) CE Spec. No. : HM200101 Issued Date : 2001.07.30 Revised Date : 2004.12.21 Page No. : 3/5 HSMC Product Specification ...

Page 4

... Head Office And Factory: Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HM117 Marking: H Date Code Note: Green label is used for pb-free packing Pin Style: 1 ...

Page 5

... L Peak Temperature ( Time within actual Peak Temperature ( Ramp-down Rate o Time Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HM117 o o C~35 C Humidity=65%±15% Ramp- Preheat Ramp-down Peak Time Sn-Pb Eutectic Assembly o ) <3 C/sec ...

Related keywords