GM71C17400C Hynix Semiconductor, GM71C17400C Datasheet - Page 4

• Manufacturer Part Number: GM71C17400C
• Description: 4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
• Manufacturer: Hynix Semiconductor

Rev 0.1 / Apr’01
Capacitance (V
Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
AC Characteristics (V
Read, Write, Read-Modify-Write and Refresh Cycles (Common Parameters)
Symbol
Test Conditions
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RC
RP
CP
RAS
CAS
ASR
RAH
ASC
CAH
RCD
RAD
RSH
CSH
CRP
ODD
DZO
DZC
T
Input rise and fall times : 5ns
Input timing reference levels : 0.8V, 2.4V
Symbol
2. CAS = V
C
C
C
I1
I2
I/O
Random Read or Write Cycle Time
RAS Precharge Time
CAS Precharge Time
RAS Pulse Width
CAS Pulse Width
Row Address Set up Time
Row Address Hold Time
Column Address Set-up Time
Column Address Hold Time
RAS to CAS Delay Time
RAS to Column Address Delay Time
RAS Hold Time
CAS Hold Time
CAS to RAS Precharge Time
OE to D
OE Delay Time from D
CAS Delay Time from D
Transition Time (Rise and Fall)
IH
to disable D
IN
CC
Input Capacitance (Address)
Input Capacitance (Clocks)
Output Capacitance (Data-In/Out)
Delay Time
= 5.0V+/-10%, T
Parameter
OUT
CC
.
= 5.0V+/-10%, Vss=0V, T
IN
IN
Parameter
A
= 25C)
Output timing reference levels : 0.4V, 2.4V
Output load : 2 TTL gate + C
GM71C(S)17400
C/CL-5
Min
30
50
13
17
12
13
50
13
90
0
0
5
0
0
3
7
7
7
10,000
10,000
Max
45
30
50
-
-
-
-
-
-
-
-
-
-
-
-
-
(Including scope and jig)
GM71C(S)17400
C/CL-6
Min
Min
110
A
40
10
60
15
10
10
20
15
15
60
15
0
0
5
0
0
3
-
-
-
= 0 ~ 70C, Notes 1, 2, 18,19)
10,000
10,000
Max
45
30
50
GM71C(S)17400C/CL
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
L
GM71C(S)17400
C/CL-7
Min
5
7
7
130
(100pF)
50
10
70
18
10
15
20
15
18
70
18
0
0
5
0
0
3
10,000
10,000
Max
52
35
50
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
pF
pF
pF
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
1, 2
Note
1
1
3
4
5
6
6
7