K9K1208U0M-YIB0 Samsung semiconductor, K9K1208U0M-YIB0 Datasheet

K9K1208U0M-YIB0

Manufacturer Part Number

K9K1208U0M-YIB0

Description

64M x 8 Bit NAND Flash Memory

Manufacturer

Samsung semiconductor

Datasheet

1.K9K1208U0M-YIB0.pdf (26 pages)

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K9K1208U0M-YCB0, K9K1208U0M-YIB0

Note : For more detailed features and specifications including FAQ, please refer to Samsung’ s Flash web site.

right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you

have any questions, please contact the SAMSUNG branch office near your office.

Document Title

Revision History

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the

64M x 8 Bit NAND Flash Memory

Revision No

http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html

0.0

0.1

0.2

0.3

History

1. Initial issue

- The followings are disprepancy items between K9K5608U0M (256Mb

1. Changed Input / Output Capacitance

1. Changed SE pin description

1. Changed don’ t care mode in address cycles

2. Explain how pointer operation works in detail.

3. Renamed GND input (pin # 6) on behalf of SE (pin # 6)

4. Updated operation for tRST timing

Read Cycle Time (tRC)

Write Cycle Time (tWC)

WE High hold Time (tWH)

Data Hold Time (tDH)

RE High Hold Time (tREH)

DDP) and K9K1208U0M (512Mb DDP).

- SE is recommended to coupled to GND or Vcc and should not be

- *X can be "High" or "Low" => *L must be set to "Low"

- The SE input controls the access of the spare area. When SE is high,

- If reset command(FFh) is written at Ready state, the device goes into

- Input / Output Capacitance (Max.) : 20 pF --> 30pF

- Input Capacitance (Max.) : 20 pF --> 30pF

toggled during reading or programming.

the spare area is not accessible for reading or programming. SE is rec

during reading or programming.

=> Connect this input pin to GND or set to static low state unless the

sequential read mode excluding spare area is used.

Busy for maximum 5us.

ommended to be coupled to GND or Vcc and should not be toggled

AC Characteristics

K9K5608U0M

Min. 50ns

Min. 15ns

Min. 10ns

Min. 15ns

K9K1208U0M

Min. 60ns

Min. 25ns

Min. 15ns

Min. 25ns

FLASH MEMORY

Draft Date

June 19th 2000

June 24th 2000

July 17th 2000

Nov. 20th 2000

Remark

Preliminary

Final

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