K9K1208U0M-YIB0 Samsung semiconductor, K9K1208U0M-YIB0 Datasheet - Page 11

• Manufacturer Part Number: K9K1208U0M-YIB0
• Description: 64M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9K1208U0M-YCB0, K9K1208U0M-YIB0
Erase Flow Chart
NAND Flash Technical Notes (Continued)
*
Block Replacement
Erase Error
memory
Buffer
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
error occurs
No
Read Status Register
Write Block Address
Erase Completed
or R/B = 1 ?
I/O 0 = 0 ?
I/O 6 = 1 ?
Write D0h
Write 60h
Start
Yes
Yes
Page a
No
Block A
Block B
11
Reclaim the Error
Read Flow Chart
When the error happens with page "a" of Block "A", try
to write the data into another Block "B" from an exter-
nal buffer. Then, prevent further system access to
Block "A" (by creating a "invalid block" table or other
appropriate scheme.)
No
Page Read Completed
FLASH MEMORY
ECC Generation
Write Address
Verify ECC
Read Data
Write 00h
Start
Yes