HY5DU561622ALT-K HYNIX [Hynix Semiconductor], HY5DU561622ALT-K Datasheet - Page 32

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HY5DU561622ALT-K

Manufacturer Part Number
HY5DU561622ALT-K
Description
256M-S DDR SDRAM
Manufacturer
HYNIX [Hynix Semiconductor]
Datasheet
Rev. 0.4/ May. 02
Input Setup Time (fast slew rate)
Input Hold Time (fast slew rate)
Input Setup Time (slow slew rate)
Input Hold Time (slow slew rate)
Input Pulse Width
Write DQS High Level Width
Write DQS Low Level Width
Clock to First Rising edge of DQS-In
Data-In Setup Time to DQS-In (DQ & DM)
Data-in Hold Time to DQS-In (DQ & DM)
DQ & DM Input Pulse Width
Read DQS Preamble Time
Read DQS Postamble Time
Write DQS Preamble Setup Time
Write DQS Preamble Hold Time
Write DQS Postamble Time
Mode Register Set Delay
Exit Self Refresh to Any Execute Command
Average Periodic Refresh Interval
Parameter
Symbol
t
t
t
t
t
t
t
WPRES
WPREH
t
t
t
t
t
DQSH
WPST
DQSL
DQSS
DIPW
t
RPRE
RPST
t
t
MRD
REFI
t
IPW
t
t
t
XSC
DS
DH
IS
IH
IS
IH
0.35
0.35
0.75
1.75
0.25
Min
200
0.9
0.9
1.0
1.0
2.2
0.5
0.5
0.9
0.4
0.4
0
2
-
DDR266A
Max
1.25
1.1
0.6
0.6
7.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min
0.35
0.35
0.75
1.75
0.25
200
0.9
0.9
1.0
1.0
2.2
0.5
0.5
0.9
0.4
0.4
0
2
-
DDR266B
Max
1.25
1.1
0.6
0.6
7.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.35
0.35
0.75
0.25
Min
200
1.1
1.1
1.1
1.1
2.5
0.6
0.9
0.4
0.4
0.6
2
0
2
HY5DU56422A(L)T
HY5DU56822A(L)T
HY5DU561622A(L)T
-
DDR200
Max
1.25
1.1
0.6
0.6
7.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
ns
ns
ns
ns
ns
ns
ns
ns
us
32
2,3,5,
2,4,5,
11,12
Note
6,7,
,13
6
6
6
8

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