M12L16161A-4.3T ETC, M12L16161A-4.3T Datasheet - Page 18

• Manufacturer Part Number: M12L16161A-4.3T
• Description: 512K x 16Bit x 2Banks Synchronous DRAM
• Manufacturer: ETC

Read & Write Cycle at Different Bank @ Burst Length = 4
*Note: 1.
Elite Semiconductor Memory Technology Inc.
DQ
CLOCK
A10/AP
ADDR
CL=3
CL=2
R A S
CKE
CAS
WE
C S
DQM
BA
t
CDL
0
Row Active
should be met to complete write.
(A-Bank)
RAa
RAa
1
2
(A-Bank)
Read
CAa
3
4
QAa0
5
Row Active
(B-Bank)
RBb
QAa0
RBb
QAa1
RBb
6
QAa2
QAa1
7
Precharge
(A-Bank)
QAa3
QAa2
8
QAa3
9
HIGH
P.18
1 0
1 1
(B-Bank)
Write
DBb0
DBb0
CBb
1 2
Row Active
(A-Bank)
RAc
DBb1
DBb1
RAc
1 3
DBb2
DBb2
Publication Date : Jan. 2000
1 4
DBb3
DBb3
1 5
t
CDL
(A-Bank)
Read
CAc
M12L16161A
1 6
*Note1
Revision : 1.3u
1 7
QAc0
: D o n ' t C a r e
1 8
QAc0
QAc1
1 9
QAc2
QAc1