GM71C4403C-60 LG [LG Semicon Co.,Ltd.], GM71C4403C-60 Datasheet - Page 4

• Manufacturer Part Number: GM71C4403C-60
• Description: 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM
• Manufacturer: LG [LG Semicon Co.,Ltd.]

4
LG Semicon
Capacitance (V
Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
AC Characteristics (V
Read, Write, Read-Modify-Write and Refresh Cycles (Common Parameters)
Symbol
Test Conditions
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RC
RP
RAS
CAS
ASR
RAH
ASC
CAH
RCD
RAD
RSH
CSH
CRP
ODD
DZO
DZC
T
REF
Input rise and fall times: 2ns
Input timing reference levels: V
Input level : V
Symbol
2. CAS = V
C
C
C
¤
I1
I2
I/O
Random Read or Write Cycle Time
RAS Precharge Time
RAS Pulse Width
CAS Pulse Width
Row Address Set-up Time
Row Address Hold Time
Column Address Set-up Time
Column Address Hold Time
RAS to CAS Delay Time
RAS to Column Address Delay Time
RAS Hold Time
CAS Hold Time
CAS to RAS Precharge Time
OE to D
OE Delay Time from D
CAS Set-up Time from D
Transition Time (Rise and Fall)
Refresh Period
IH
IL
CC
to disable D
=0V, V
Input Capacitance (Address)
Input Capacitance (Clocks)
Data Input/Output Capacitance (Data-In/Out)
IN
= 5V+/-10%, T
Delay Time
IH
CC
Parameter
=3.0V
OUT
= 5V+/-10%, T
.
IL
=0.8V, V
IN
Parameter
IN
A
= 25C)
IH
=2.4V
A
= 0 ~ 70C, Notes 1, 14, 15, 16)
Min
GM71C4403
C-60
104
40
60
10
10
10
20
15
15
48
10
15
Output timing reference levels: V
Output load : 1 TTL gate + C
0
0
0
0
2
-
10,000
10,000
Max
45
30
50
16
-
-
-
-
-
-
-
-
-
-
-
-
Min
Min
GM71C4403
C-70
124
10
-
-
-
50
70
13
20
15
18
58
10
18
13
0
0
0
0
2
-
(Including scope and jig)
10,000
10,000
Max
52
35
50
16
-
-
-
-
-
-
-
-
-
-
-
-
Max
5
7
7
Min
GM71C4403
C-80
144
10
60
80
15
15
20
15
20
68
10
20
0
0
0
0
2
-
L
10,000
10,000
(100§Ü)
Max
GM71C4403C
60
40
50
16
-
-
-
-
-
-
-
-
-
-
-
-
OL
Unit
§Ü
§Ü
§Ü
=0.8V, V
Unit
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
OH
Note
1, 2
Note
1
1
=2.0V
19
20
22
8
9
7