P4C150-10CC PYRAMID [Pyramid Semiconductor Corporation], P4C150-10CC Datasheet - Page 2

• Manufacturer Part Number: P4C150-10CC
• Description: ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM
• Manufacturer: PYRAMID [Pyramid Semiconductor Corporation]

MAXIMUM RATINGS
RECOMMENDED OPERATING
CONDITIONS
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage (2)
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
Document # SRAM105 REV A
Symbol
Symbol
Symbol
Commercial
Military
V
V
T
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other condi-
tions above those indicated in the operational sections of this
specification is not implied. Exposure to MAXIMUM rating condi-
tions for extended periods may affect reliability.
V
Grade
V
TERM
A
V
V
CC
I
I
I
LO
OH
LI
CC
OL
IH
P4C150
IL
(2)
Output High Voltage
(TTL Load)
Output Low Voltage
(TTL Load)
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
Power Supply Pin with
Respect to GND
Terminal Voltage with
Respect to GND
(up to 7.0V)
Operating Temperature – 55 to +125
Dynamic Operating Current
Parameter
-55°C to +125°C
Ambient Temp
Parameter
0°C to 70°C
Parameter
(1)
– 0.5 to +7
Gnd
V
0V
0V
– 0.5 to
Value
CC
I
I
V
V
OH
OL
CC
CC
+0.5
= +8 mA, V
5.0V
5.0V
= –4 mA, V
= Max., V
= Max., CS = V
Temperature
V
Commercial
± 10%
± 10%
CC
Range
Military
Unit
°C
V
V
Test Conditions
IN
CC
CC
= GND to V
= Min
= Min.
IH
, V
2. Extended temperature operation guaranteed with 400 linear feet per
3. Transient inputs with V
4. This parameter is sampled and not 100% tested.
CAPACITANCES
(V
Symbol
Symbol
– 100mA, respectively, are permissible for pulse widths up to 20 ns.
T
T
P
I
minute of air flow.
C
C
CC
OUT
OUT
BIAS
STG
T
IN
OUT
= 5.0V, T
-10
130
N/A
= GND to V
CC
Output Capacitance V
Input Capacitance
Temperature Under
Bias
Storage Temperature
Power Dissipation
DC Output Current
N/A
130
-12
Parameter
A
Parameter
= 25°C, f = 1.0MHz)
CC
-15
120
145
IL
(4)
and I
115
135
–0.5
IL
-20
2.4
2.2
not more negative than – 3.0V and
–5
–5
Min.
(3)
Conditions Typ. Unit
P4C150
V
100
125
OUT
-25
IN
= 0V
= 0V
– 55 to +125
– 65 to +150
V
CC
Value
Max.
N/A
120
-35
1.0
50
0.4
0.8
+5
+5
=+0.5
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Unit
mA
mA
Unit
Unit
µA
µA
mA
pF
pF
°C
°C
V
V
V
V
W