P4C163 PYRAMID [Pyramid Semiconductor Corporation], P4C163 Datasheet - Page 6

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P4C163

Manufacturer Part Number
P4C163
Description
ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS
Manufacturer
PYRAMID [Pyramid Semiconductor Corporation]
Datasheet

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AC CHARACTERISTICS—WRITE CYCLE
(V
Notes:
11. CE
12. OE is LOW for this WRITE cycle to show t
13. If CE
14. Write Cycle Time is measured from the last valid address to the first
Document # SRAM120 REV C
WRITE CYCLE NO. 1 (WE
Symbol
CC
HIGH, the output remains in a low impedance state.
transitioning address.
t
t
t
t
t
t
t
t
t
t
= 5V ± 10%, All Temperature Ranges)
AS
AH
DH
WZ
OW
WC
CW
AW
WP
DW
P4C163/163L
1
and WE must be LOW, and CE
1
goes HIGH, or CE
Write Cycle Time
Chip Enable
Time to End of Write
Address Valid to
End of Write
Address Set-up Time
Write Pulse Width
Address Hold Time
Data Valid to End
of Write
Data Hold Time
Write Enable to
Output in High Z
Output Active
from End of Write
Parameter
2
goes LOW, simultaneously with WE
WE
WE
WE
WE CONTROLLED)
2
HIGH for WRITE cycle.
WZ
(2)
and t
OW
.
(11)
Min Max Min Max Min Max
25
18
18
18
13
0
0
0
3
-25
10
35
25
25
20
15
0
0
0
5
-35
14
45
33
33
25
20
0
0
0
5
-45
18
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Page 6 of 12

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