EN29F002AB-45JC EON [Eon Silicon Solution Inc.], EN29F002AB-45JC Datasheet - Page 21

• Manufacturer Part Number: EN29F002AB-45JC
• Description: 2 Megabit (256K x 8-bit) Flash Memory
• Manufacturer: EON [Eon Silicon Solution Inc.]

Symbol
V
I
I
I
I
V
V
CC1
CC2
CC3
CC4
V
V
I
I
V
I
LIT
LKO
LO
OH
LI
OL
IH
ID
IL
Table 7. DC Characteristics
(T
Notes:
(1) RESET# pin input buffer is always enabled so that it draws power if not at full CMOS supply voltages
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
a
Input Leakage Current
Output Leakage Current
Supply Current (read) TTL Byte
Supply Current (Standby) TTL
Supply Current (Standby) CMOS
Supply Current (Program or Erase)
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
Output High Voltage CMOS
A9 Voltage (Electronic Signature)
and RESET# Voltage (Temporary
Sector Unprotect)
A9 and RESET# Current (Electronic
Signature)
Supply voltage (Erase and
Program lock-out)
= 0°C to 70°C or - 40°C to 85°C; V
Parameter
(1)
RESET# = CE# = Vcc ± 0.2V
Byte program, Sector or Chip
CE# = V
CE# = V
CC
Rev. A, Issue Date: 2003/03/26
A9, RESET# = V
Erase in progress
Test Conditions
0V≤ V
0V≤ V
I
I
= 5.0V ± 10%)
21
OH
OH
I
CE# = V
OL
f = 6MHz
IL
IL
= -2.5 mA
= -100 µA
OUT
= 2 mA
; OE# = V
; OE# = V
IN
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
≤ Vcc
≤ Vcc
EN29F002A / EN29F002AN
IH
ID
IH
IH
;
;
Vcc - 0.4V
10.5
Min
-0.5
2.4
3.2
2
Vcc ± 0.5
Max
0.45
11.5
100
0.8
1.0
5.0
4.2
±5
±5
30
30
Unit
mA
mA
mA
µA
µA
µA
µA
V
V
V
V
V
V
V