EN29LV160 EON [Eon Silicon Solution Inc.], EN29LV160 Datasheet
EN29LV160
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EN29LV160 Summary of contents
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... The EN29LV160 features 3.0V voltage read and write operation, with access times as fast as 70ns to eliminate the need for WAIT states in high-performance microprocessor systems. The EN29LV160 has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable (WE) controls, which eliminate bus contention issues. This device is designed to allow either single Sector or full chip erase operation, where each Sector can be individually protected against program/erase operations or temporarily unprotected to erase or program ...
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... DQ5 DQ12 DQ2 DQ10 DQ11 DQ0 DQ8 DQ9 CE# OE# 2 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 48 A16 47 BYTE# 46 Vss 45 DQ15/A-1 44 DQ7 43 DQ14 42 DQ6 41 DQ13 40 DQ5 39 DQ12 38 DQ4 37 Vcc 36 DQ11 35 DQ3 ...
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... Not Connected to anything BYTE# Byte/Word Mode This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. FIGURE 1. LOGIC DIAGRAM EN29LV160 A0 – A19 Reset Byte 3 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 DQ0 – DQ15 (A-1) RY/BY ...
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... Table 2. Sector Address Tables (EN29LV160T) Sector A19 A18 A17 A16 SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 ...
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... Table 3. Sector Address Tables (EN29LV160B) Sector A19 A18 A17 A16 SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 ...
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... Block Protect Switches Erase Voltage Generator Program Voltage Generator Chip Enable Output Enable STB Timer 6 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 EN29LV160 -70 - DQ0-DQ15 (A-1) Input/Output Buffers STB Data Latch ...
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... ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 DQ8-DQ15 A0- Byte# A19 DQ0-DQ7 = OUT OUT High-Z High-Z X High-Z High-Z X High-Z ...
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... DQ14 are tri-stated, and the DQ15 pin is used as an input for the LSB (A-1) address function. Standby Mode The EN29LV160 has a CMOS-compatible standby mode, which reduces the current to < 1µA (typical placed in CMOS-compatible standby when the BYTE# pin must also be at CMOS input levels. The device also has a TTL-compatible standby mode, ...
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... When doing Sector Unprotect, all the other sectors should be protected first. The second method is meant for programming equipment. This method requires V both OE# and A9 pin and non-standard microprocessor timings are used. This method is described in a separate document called EN29LV160 Supplement, representative of Eon Silicon Solution, Inc. Temporary Sector Unprotect This feature allows temporary unprotection of previously protected sector groups to change data while in-system ...
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... Max. timeout per individual block erase 2^N times typical 0000h Max timeout for full chip erase 2^N times typical (00h = not supported) Data 0015h Device Size = 2^N byte 10 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 when the device is in the Description Description Description ...
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... Simultaneous Operation 0000h 00 = Not Supported Supported Burst Mode Type 0000h 00 = Not Supported Supported Page Mode Type 0000h 00 = Not Supported Word Page Word Page 11 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Description ...
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... not initiate a write cycle. = VIL VIH the device will not accept commands on the rising edge ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 . The system must LKO . LKO = VIH. To initiate a write and OE are all ...
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... COMMAND DEFINITIONS The operations of the EN29LV160 are selected by one or more commands written into the command register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program, Sector Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are made up of data sequences written at specific addresses via the command register. ...
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... Word / Byte Programming Command The device may be programmed by byte or by word, depending on the state of the Byte# Pin. Programming the EN29LV160 is performed by using a four bus-cycle operation (two unlock write cycles followed by the Program Setup command and Program Data Write cycle). When the program command is executed, no additional CPU controls or timings are necessary ...
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... After an erase-suspended program operation is complete, the system can once again read array data within non-suspended sectors. The system can determine the status of the program operation using the This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 15 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 not require ...
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... WRITE OPERATION STATUS DQ7 DATA Polling The EN29LV160 provides DATA Polling on DQ7 to indicate to the host system the status of the embedded operations. The DATA Polling feature is active during the Byte Programming, Sector Erase, Chip Erase, Erase Suspend. (See Table 6) When the Byte Programming is in progress, an attempt to read the device will produce the complement of the data last written to DQ7 ...
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... DQ6 Toggle Bit I The EN29LV160 provides a “Toggle Bit” on DQ6 to indicate to the host system the status of the embedded programming and erase operations. (See Table 6) During an embedded Program or Erase operation, successive attempts to read data from the device at any address (by toggling will result in DQ6 toggling between “zero” and “one”. Once the embedded Program or Erase operation is complete, DQ6 will stop toggling and valid data will be read on the next successive attempts ...
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... This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. DQ7 DQ6 DQ5 DQ7# Toggle 0 0 Toggle Toggle Data Data Data DQ7# Toggle 0 18 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 RY/BY DQ3 DQ2 # No N/A 0 toggle 1 Toggle 0 N/A Toggle 1 Data Data 1 N/A N/A 0 ...
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... Chip Erase, Erase or Erase suspend on currently addressed Sector. (When DQ5=1, Erase Error due to currently ‘-1-0-1-0-1-0-1-’ addressed Sector. Program during Erase Suspend on- going at current address Erase Suspend read on DQ2 non Erase Suspend Sector 19 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 ...
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... PROGRAM ADDRESS / PROGRAM DATA This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. START Write Program Command Sequence (shown below) Data Poll Device Verify Data? Last Address? Yes Programming Done 20 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 ...
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... START Write Erase Command Sequence Data Poll from System or Toggle Bit successfully completed Data =FFh? No Erase Done This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Yes 21 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 ...
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... See the Command Definitions section for more information. Chip Erase 555H/AAH 2AAH/55H 555H/80H 555H/AAH 2AAH/55H 555H/10H This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Sector Erase 555H/AAH 2AAH/55H 555H/80H 555H/AAH 2AAH/55H Sector Address/30H 22 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 ...
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... DQ7 = Data DQ5 = 1? Yes Read Data (1) DQ7 = Data? No Fail Start Read Data twice DQ6 = Toggle? Yes No DQ5 = 1? Yes Read Data twice (2) DQ6 = Toggle? Yes Fail 23 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Yes Yes Pass No No Pass ...
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... Wait 0.4 µs Read from sector address with Data = 01h? Yes Yes Protect another sector? No Remove V ID from RESET# Write reset command Sector Protect complete 24 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Reset PLSCNT = 1 Yes ...
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... Read from sector address with Set up next sector Data = 00h? address Yes No Last sector verified? Yes Remove V from Write reset ID RESET# command 25 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Temporary Sector Unprotect Mode Sector Unprotect complete ...
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... Chip Erase in progress -100 µ ± 0.3V. BYTE# and RESET# pin input buffers are always enabled so that 26 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Min Max Typ ±5 ± 0.4 1 ...
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... V L Ω 6.2 k -70 -90 1 TTL Gate 30 100 0.0-3.0 0.0-3.0 1.5 1.5 1.5 1.5 Test Setup Max Max Min Min 27 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Ω 2.7 k Unit Speed options Unit -70 -90 µs 20 500 nS 500 ...
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... READY RY/BY# CE# OE# RESET This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications Reset Timings NOT During Automatic Algorithms t READY t RH Reset Timings During Automatic Algorithms 28 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 ...
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... This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Min Min Min t BCS Byte timings for Read Operations t t BCS Byte timings for Write Operations 29 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Speed -70 - CBH RBH Unit ns ...
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... Addresses Stable t ACC Output Valid 30 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Speed Options -70 -90 Min 70 90 Max 70 90 Max 70 90 Max 30 35 Max 20 20 Max 20 20 Min 0 0 ...
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... Low Min SetupTime Min Hold Time Min Min Typ Max Typ Max Typ Max Min Min ID 31 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Speed Options -70 -90 Unit ...
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... Toggle and 10 Data Polling Min Min Min Min Min Typ Max Typ Max Typ Max Min Min ID 32 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Speed Options -70 -90 Unit ...
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... OUT Test Conditions 150°C 125°C 33 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Comments Excludes 00H programming prior to erasure Excludes system level overhead Minimum 100K cycles Min Max -1.0 V 12.0 V -1.0 V Vcc + 1.0 V -100 mA 100 mA Typ ...
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... 0x555 for chip erase WPH t 0x30 BUSY 34 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Read Status Data (last two cycles WHWH2 WHWH3 Status D OUT t RB =true data at read address. out ...
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... CH t WPH t WHWH1 BUSY DH is the true data at the program address. OUT measurement references. It cannot occur as shown during a valid VCS 35 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Program Command Sequence (last 2 cycles Status D OUT t RB ...
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... Comple- Complement ment Status Status Data Data Valid Status Valid Status (first read) (second d) 36 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 VA True Valid Data True Valid Data VA VA Valid Data Valid Status (stops toggling) ...
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... Sector Erase 0x10 for Chip Erase Enter Erase Erase Suspend Suspend Program Erase Enter Suspend Read 37 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 CWHWH3 Status D OUT Erase Resume Enter Erase Erase Suspend Suspend Program ...
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... V t VIDR CE# WE# t RSP RY/BY# This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Description Min Min 38 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Speed Option Unit -70 -90 500 µ VIDR ...
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... For Sector Protect, use A6=0, A1=1, A0=0. For Sector Unprotect, use A6=1, A1=1, A0=0. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Valid 60h Sector Protect/Unprotect Sector Protect: 150 uS Sector Unprotect ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 t VIDR Valid Valid 40h Status Verify >0.4µS 0V ...
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... FIGURE 14. TSOP 12mm x 20mm This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 40 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 ...
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... This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 41 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 ...
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... FIGURE 15. 48TFBGA package outline This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 42 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 ...
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... All other pins -0.5 to Vcc+0.5 Vcc -0.5 to +4 Regulated Voltage Range: 3.0-3.6V Full Voltage Range: 2.7 to Vcc +1.5V 43 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Value Unit °C °C °C 200 –1.0V for ss + 1.5 V for periods up to 20ns. See figure ...
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... SPEED 70 = 70ns 90 = 90ns BOOT CODE SECTOR ARCHITECTURE T = Top boot Sector B = Bottom boot Sector BASE PART NUMBER EN = EON Silicon Solution Inc. 29LV = FLASH, 3V Read Program Erase 160 = 16 Megabit ( 16) 44 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 ...
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... Revisions List Revision No Description A Preliminary draft This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 45 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2004/03/30 EN29LV160 Date 3/30/2004 ...