EN29GL064 EON [Eon Silicon Solution Inc.], EN29GL064 Datasheet - Page 64

• Manufacturer Part Number: EN29GL064
• Description: 64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
• Manufacturer: EON [Eon Silicon Solution Inc.]

Revisions List
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Revision No
A
B
C
D
E
F
G
H
I
J
K
L
M
Description
Preliminary
1. Add internal pull-up description for WP# pin in Table1 in Page 4
2. Add WP#/ACC, VIO pin in Figure3 in Page 4
3. Modify tOE from 30ns to 25ns in Table 17 in page 40 and Page 5
4. Add Secured Silicon Sector Entry/Exit command in Table13
5. Modify typo from Sector Erase Suspend to Erase/Program Suspend,
6. Del table 22 and Figure 20 Temporary Sector Unprotect Timing table and
7. Add ACC and total write buffer time spec in Table 22.
8. Modify DC Characteristics in table 15
9. Del apply VID on address pin A9 to access autoselect codes function.
10. Modify A9 spec from 9.5V to Vcc+0.5V in ABSOLUTE MAXIMUM
1. Modify naming for DQ0 OTP Lock Bit to Secured Silicon Sector
2. Modify Table.8 Secured Silicon Sector Address Range 000000h-
3. Add note “The address 0h~7h in Secured Silicon Sector is reserved
4. Update FIGURE 24. 64 ball Fortified Ball Grid Array (FBGA), 11 X13
5. Modify from Sector 0 to all sectors in note 1 of Table 6 and note 2, 3 and
6. Add “User only can use DQ6 and RY/BY# pin to detect programming
1. Add the 48-Ball (TFBGA) package information in page 1, 3, 61 and 64.
2. Correct the
3. Change the package code of 64-ball BGA in page 64.
Add the valid combinations of EN29GL064 on page 64
Add a note "when sector SA0 is suspended, if system enters Secured
Sector mode,..." on page 38.
Add Write Buffer byte mode command and note that maximum value is 31
for word and byte mode in page 43
Correct the typo for The valid combinations of EN29GL064 table on
page 64.
1. Remove 48-pin TSOP package type information on page 1, 2, 59
2. Remove 48-ball TFBGA package type information on page 1, 3,
1. Update Table 15. DC Characteristics on page 44.
2. Update Chip Erase time from 140s to 60s (max.) on page 57.
1.
Remove VIO function.
Revive VIO function.
VHH from 10.5~11.5V to 8.5~9.5V
ICC1 5MHz 20 15mA typ, 10MHz 30 25mA typ
ICC4, ICC5 and ICC6 1 1.5uA typ, 5 10uA max
Add IIO2 and IACCspec
from Sector Erase Resume to Erase/Program resume in Table13
Diagram and Figure 21.Sector Protect/Unprotect Timing Diagram
( Remove TABLE 5 and modify description Autoselect section for using
High voltage to get Autoselect Codes )
RATINGS
mm, Pitch 1mm package outline in page 61
note 9 of PPB section in page 33
status” in note 10 in page 33
(1) Top boot: Sector 0~123 are 1 PPB per 4 sectors, Sector
Protection Bit in Page 33
000007h from Determined by customer to Reserve for Factory
for Factory“ in Page 39
(2) Bottom boot: Sector 0~10 have PPB for each boot sector,
and 64.
61 and 64.
(1) Icc3 from 30mA to 40mA. (max.)
(2) Icc4, Icc5, Icc6 from 1.5/10uA to 2.0/20uA (typ./max.)
Add ERRATA SHEET on page 63
124~134 have PPB for each boot sector.
Sector 11~134 are 1 PPB per 4 sectors
Persistent Protection Bits status in page 31, 32 and 33.
Rev. M, Issue Date: 2011/04/13
64
©2004 Eon Silicon Solution, Inc.,
EN29GL064
www.eonssi.com
Date
2009/03/20
2009/05/12
2009/7/14
2009/07/22
2009/09/07
2009/11/02
2010/03/15
2010/04/06
2010/04/28
2010/05/11
2010/06/09
2011/01/28
2011/04/13