EN29LV040A EON [Eon Silicon Solution Inc.], EN29LV040A Datasheet - Page 25

• Manufacturer Part Number: EN29LV040A
• Description: 4 Megabit (512K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
• Manufacturer: EON [Eon Silicon Solution Inc.]

Parameter Description
Table 11. ERASE AND PROGRAMMING PERFORMANCE
Table 12. LATCH UP CHARACTERISTICS
Note : These are latch up characteristics and the device should never be put under these conditions. Refer to Absolute
Maximum ratings for the actual operating limits.
Table 13. DATA RETENTION
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Erase/Program Endurance
Byte Programming Time
Chip Programming Time
Input voltage with respect to V
Sector Erase Time
Chip Erase Time
Minimum Pattern Data Retention Time
Input voltage with respect to V
Parameter
Parameter Description
(including A9 and OE )
Vcc Current
ss
on all pins except I/O pins
100K
Typ
0.5
4.2
4
8
ss
on all I/O Pins
Limits
Max
12.6
300
10
80
Rev. A, Issue Date: 2005/08/16
25
Test Conditions
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
150°C
125°C
cycles
Unit
sec
sec
sec
µs
-100 mA
-1.0 V
-1.0 V
Min
Excludes 00H programming prior
Excludes system level overhead
Minimum 100K cycles
Min
10
20
EN29LV040A
Comments
to erasure
Vcc + 1.0 V
100 mA
12.0 V
Max
Years
Years
Unit