EN29LV160 EON [Eon Silicon Solution Inc.], EN29LV160 Datasheet - Page 9

• Manufacturer Part Number: EN29LV160
• Description: 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
• Manufacturer: EON [Eon Silicon Solution Inc.]

To access the autoselect codes in-system; the host system can issue the autoselect command via
the command register, as shown in the Command Definitions table. This method does not require
V
Write Mode
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two
unlock write cycles, followed by the program set-up command. The program address and data are written
next, which in turn initiate the Embedded Program algorithm. The system is
controls or timings. The device automatically provides internally generated program pulses and verifies
the programmed cell margin. The Command Definitions in Table 5 show the address and data
requirements for the byte program command sequence.
When the Embedded Program algorithm is complete, the device then returns to reading array data and
addresses are no longer latched. The system can determine the status of the program operation by using
DQ7 or DQ6. See “Write Operation Status” for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm are ignored.
Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed
from a “0” back to a “1”. Attempting to do so may halt the operation and set DQ5 to “1”, or cause the
Data# Polling algorithm to indicate the operation was successful. However, a succeeding read will show
that the data is still “0”. Only erase operations can convert a “0” to a “1”.
Sector Protection/Unprotection
The hardware sector protection feature disables both program and erase operations in any sector. The
hardware sector unprotection feature re-enables both program and erase operations in previously
protected sectors.
There are two methods to enabling this hardware protection circuitry. The first one requires only
that the RESET# pin be at V
disable this feature. See Flowchart 7a and 7b for the algorithm and Figure 12 for the timings.
When doing Sector Unprotect, all the other sectors should be protected first.
The second method is meant for programming equipment. This method requires V
both OE# and A9 pin and non-standard microprocessor timings are used. This method is described
in a separate document called EN29LV160 Supplement,
representative of Eon Silicon Solution, Inc.
Temporary Sector Unprotect
This feature allows temporary unprotection of previously protected
sector groups to change data while in-system. The Sector Unprotect
mode is activated by setting the RESET# pin to V
formerly protected sectors can be programmed or erased by simply
selecting the sector addresses. Once is removed from the RESET#
pin, all the previously protected sectors are protected again.
accompanying figure and timing diagrams for more details.
COMMON FLASH MEMORY
INTERFACE
(CFI)
The
specification
systems software interrogation handshake,
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
ID
. See “Command Definitions” for details on using the autoselect mode.
common
outlines
flash
device
interface
ID
and then standard microprocessor timings can be used to enable or
and
Notes:
1. All protected sectors unprotected.
2. Previously protected sectors protected
again.
(CFI)
host
Rev. A, Issue Date: 2004/03/30
ID
. During this mode,
9
which
software algorithms to be used for entire
families of devices.
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
which can be obtained by contacting a
See
allows
Unprotect Completed
Perform Erase or Program
not
specific
Temporary Sector
Reset#=V
required to provide further
Software support can
Reset#=V
Operations
EN29LV160
Start
vendor-specified
ID (note 1)
ID
IH
be applied to
(note 2)