BFG520W/X NXP [NXP Semiconductors], BFG520W/X Datasheet - Page 4

• Manufacturer Part Number: BFG520W/X
• Description: NPN 9 GHz wideband transistors
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
CHARACTERISTICS
T
Notes
1. G
2. I
3. d
4. I
V
V
V
I
h
C
f
G
|S
F
P
ITO
V
d
SYMBOL
j
CBO
T
FE
2
(BR)CBO
(BR)CES
(BR)EBO
L1
o
= 25 C unless otherwise specified.
re
NPN 9 GHz wideband transistors
UM
21
f
f
f
C
p
p
C
p
|
im
2
UM
= 900 MHz; f
= 795.25 MHz; f
= 250 MHz; f
= 20 mA; V
= 20 mA; V
= 60 dB (DIN45004B); I
is the maximum unilateral power gain, assuming S
collector-base breakdown voltage
collector-emitter breakdown voltage I
emitter-base breakdown voltage
collector leakage current
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain;
note 1
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
output voltage
second order intermodulation
distortion
CE
CE
q
q
= 6 V; R
= 902 MHz; measured at 2f
= 6 V; V
= 560 MHz; measured at f
q
PARAMETER
= 803.25 MHz; f
o
L
= 75 mV; R
= 50 ; T
C
= 20 mA; V
r
amb
= 805.25 MHz; measured at f
L
= 75 ; T
= 25 C;
CE
p
Rev. 04 - 21 November 2007
p
+ f
= 6 V; V
I
I
V
I
I
see Fig.4
I
T
I
T
I
T
I
T
f = 900 MHz
f = 900 MHz
f = 2 GHz
I
R
note 2
note 3
note 4
C
C
E
C
C
C
C
C
C
C
q
f
s
s
s
CB
amb
amb
amb
amb
L
q
= 10 A; I
= 810 MHz.
=10 A; I
= 10 A; R
= 20 mA; V
= 0; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
amb
= 50 ; T
= 898 MHz and 2f
= 6 V; I
= 25 C; see Fig.5
= 25 C
= 25 C
= 25 C
opt
opt
opt
p
= 25 C;
= V
; I
; I
; I
CB
12
C
C
C
CONDITIONS
= 6 V; f = 1 MHz;
o
E
E
is zero.
= 5 mA; V
= 20 mA; V
= 5 mA; V
C
; V
amb
BE
= 0
= 0
CE
CE
CE
CE
CE
CE
= 0
q
= 0
= 6 V; f = 900 MHz;
= 6 V; f = 900 MHz;
= 6 V; f = 900 MHz;
= 25 C
= 6 V; see Fig.3
= 6 V; f = 1 GHz;
= 6 V; f = 2 GHz;
= V
G
p
o
UM
q
+ f
CE
CE
6 dB; V
CE
q
f
= 6 V;
= 6 V;
=
p
= 6 V;
= 904 MHz.
10
f
r
BFG520W; BFG520W/X
= 793.25 MHz.
r
log
= V
-------------------------------------------------------------- dB.
o
1
–
20
15
2.5
60
16
6 dB; R
MIN.
S
11
S
2
21
L
120
0.35
9
17
11
17
1.1
1.6
1.85
17
26
275
TYP.
50
= 75 ;
1
Product specification
2
–
S
22
50
250
1.6
2.1
MAX.
2
4 of 15
V
V
V
nA
pF
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
mV
dB
UNIT