S8865-128G HAMAMATSU [Hamamatsu Corporation], S8865-128G Datasheet - Page 8

• Manufacturer Part Number: S8865-128G
• Description: Photodiode array combined with signal processing IC for X-ray detection
• Manufacturer: HAMAMATSU [Hamamatsu Corporation]

Dark output voltage vs. ambient temperature (measurement example)
Dimensional outlines (unit: mm)
0.001
0.01
0.1
1
0
Photodiode arrays with ampli er
*1: Distance from the bottom of the board to the center of active area
*2: Photodiode array with phosphor sheet: S8865-64G/-128G only
10
Board: G10 glass epoxy
Connector: PRECI-DIP DURTAL 800-10-012-20-001
· Material: Gd
· Phosphor thickness: 300 μm Typ.
· Detectable energy range: 30 k to 100 keV
Ambient temperature (°C)
20
5.6
Direction of scan
2
O
1
2
S:Tb
30
Photodiode 1 ch
P
2.54 × 11 = 27.94
51.2
40
40.0
+0.2
-0
(Ts=1000 ms)
50
12
S8865-64G/-128G
60
KMPDB0289EA
(× 4)
(× 12) 0.76
Photodiode array
Signal processing IC chip
2.2
S8865-64G/-128G/-256G, S8866-64G-02/-128G-02
Phosphor sheet*
2
2.54
1.6
1.27
KMPDA0233EA
8