SPECIFICATIONS
The HPD (Hybrid Photo-Detector) is a new vacuum photo-detector including a photocathode
and an avalanche diode. The HPD provides a gain of more than 1000 in a single multiplication
process called 'electron bombardment multiplication'. The photoelectrons from the photo-
cathode are accelerated by a strong electric field to hit the avalanche diode and release a
large number of electron-hole pairs corresponding to the acceleration energy. This excellent
first multiplication process enables the HPD to achieve excellent multi-photon energy resolu-
tion. This first multiplication process is followed by the second avalanche mode multiplication
to provide sufficient gain for a variety of applications.
H8236 is an HPD module, containing high voltage power supplies and a pre-amplifier.
FEATURES
NOTE:
MAXIMUM RATINGS (Absolute Maximum Value)
Spectral Response
Peak Sensitivity Wavelength
Photocathode Material
Quantum Efficiency
Effective Area
Sensitivity
Bandwidth
Signal Output
Input Power/Current
Recommended Control
Voltage Range
Signal Connector
Control Connector
Weight
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2000 Hamamatsu Photonics K.K
Input Power
Control Voltage
Operating Ambient Temperature
Operating Humidity
Average Input Light Power
Peak Input Light Power
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Able to discriminate multi-photon events
Low excess noise
High Q.E. from 450 nm to 650 nm (H8236-40)
Simple operation
Built-in high voltage power supply and pre-amplifier
Low after pulse
A at 8 V (or set the HV knob to -8 kV on the front panel of the HPD module power supply C8237) to PIN 8 and 7.5 V (or set the C8237 diode bias
B or "-3 kV" to "-8 kV" high voltage on the C8237 front panel
C or "70 V" to "152 V" diode bias voltage on the C8237 front panel
D The characteristics of the bias voltage vs. avalanche gain curve of the diode inside are affected by the ambient temperature conditions, and even
G at 3 V (or set the C8237 HV knob to -3 kV) to PIN 8 and 7.5 V (or set the C8237 diode bias voltage to +150 V) to PIN 6. Input light pulse: 50 ns
voltage to +150 V) to PIN 6
under the same ambient temperature conditions resulting curve may differ between diodes from different production lots. Refer to the individual
data sheet attached to the module.
(FWHM), 200 kHz.
A
Parameter
PRELIMINARY DATA
E
OCT. 2000
EG
PIN 2
PIN 4
PIN 8
PIN 6
Offset (Typ.)
Noise r.m.s. (Typ.)
Load
Impedance
Maximum Voltage
Polarity
To Pre-amplifier (PIN 2)
To Diode Bias Power Supply (PIN 4)
To High Voltage (PIN 8)
To Diode Bias Voltage (PIN 6)
E
AC coupled
DC coupled
E at peak sensitivity wavelength
APPLICATIONS
Photon counting application
Low intensity pulse detection
Laser scanning microscope
Particle counter
HPD (HYBRID PHOTO-DETECTOR) MODULES
H8236-07, -40
12-pin connector (Hirose: HR10A-10R-12P)
160 to 850
H8236-07
Multialkali
0.2
420
380
15
4
F without moisture condensation
8
E
6 mV/1 photoelectron
+12 V dc/50 mA
+3.5 to +7.6
DC to 3.5 MHz
-12 V dc/6 mA
more than 50
more than 5
Approx. 370
+3 to +8
Negative
0 to +40
BNC-R
-12.5
90
+8.5
-0.7
+16
-5
1
D
F
B
CD
GaAsP(Cs)
350 to 720
H8236-40
0.7
105
550
40
1
5
E
PATENT PENDING
mm Min.
V Max.
V/nW
%RH
V dc
V dc
V dc
V dc
V dc
V dc
Unit
mV
nW
nW
nm
nm
k
—
—
—
—
—
—
—
—
—
%
g
C