K9F3208W0A- SAMSUNG [Samsung semiconductor], K9F3208W0A- Datasheet - Page 26
![no-image](/images/no-image-200.jpg)
K9F3208W0A-
Manufacturer Part Number
K9F3208W0A-
Description
4M x 8 Bit NAND Flash Memory
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K9F3208W0A-.pdf
(27 pages)
- Current page: 26 of 27
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DATA PROTECTION
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at V
during power-up and power-down and recovery time of minimum 1 s is required before internal circuit gets ready for any command
sequences as shown in Figure 12. The two step command sequence for program/erase provides additional software protection.
Figure 12. AC Waveforms for Power Transition
Package Dimensions
WP
WE
V
CC
~ 2.5V
10 s
High
26
FLASH MEMORY
~ 2.5V
IL
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