K9F3208W0A- SAMSUNG [Samsung semiconductor], K9F3208W0A- Datasheet - Page 7

• Manufacturer Part Number: K9F3208W0A-
• Description: 4M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F3208W0A-TCB0, K9F3208W0A-TIB0
VALID BLOCK
NOTE :
1. The
2. The 1st block, which is placed on 00h block address, is fully guaranteed to be a valid block, does not require Error Correction.
AC TEST CONDITION
(K9F3208W0A-TCB0:T
CAPACITANCE
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
NOTE : 1. X can be V
Program/Erase Characteristics
Valid Block Number
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load
Input/Output Capacitance
Input Capacitance
Program Time
Number of Partial Program Cycles in the Same Page
Block Erase Time
blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits
erase or program factory-market bad blocks.
CLE
H
H
L
L
L
L
L
X
X
X
X
K9F3208W0A
2. WP should be biased to CMOS high or CMOS low for standby.
3. When SE is high, spare area is deselected.
Parameter
Parameter
Item
ALE
X
H
H
X
X
X
L
L
L
L
L
(1)
IL
or V
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid
(T
IH
A
Parameter
A
=25 C, Vcc=5.0V f=1.0MHz)
=0 to 70 C, K9F3208W0A-TIB0:T
CE
X
X
X
H
L
L
L
L
L
L
L
WE
H
H
Symbol
Symbol
X
X
X
X
CL=50pF(3.0V+/-10%),100pF(3.0V~3.6V)
N
C
C
VB
I/O
IN
Refer to the attached technical notes for a appropriate management of invalid blocks.
RE
H
H
H
H
H
H
X
X
X
X
Vcc=2.7V ~ 3.6V
1 TTL GATE and
0.4V to 2.4V
Test Condition
0V/V
V
V
L/H
L/H
L/H
L/H
Min
IL
IN
502
SE
=0V
=0V
X
X
X
X
X
X
Symbol
7
CC
(3)
(3)
(3)
(3)
A
t
t
PROG
Nop
=-40 to 85 C, V
BERS
(2)
0V/V
WP
H
H
H
H
H
X
X
X
X
L
CC
0.8V and 2.0V
(2)
Min
Typ.
508
Min
Value
-
-
-
Data Input
Sequential Read & Data Output
During Read(Busy)
During Program(Busy)
During Erase(Busy)
Write Protect
Stand-by
-
-
5ns
CC
=2.7V ~ 5.5V unless otherwise noted)
Read Mode
Write Mode
0.25
1 TTL GATE and CL=100pF
Typ
2
-
FLASH MEMORY
Vcc=3.6V ~ 5.5V
Max
Max
512
10
10
0.4V to 3.4V
Mode
Command Input
Address Input(3clock)
Command Input
Address Input(3clock)
Max
1.5
10
10
Blocks
Unit
Unit
pF
pF
cycles
Unit
. Do not
ms
ms