BC847BT T/R NXP Semiconductors, BC847BT T/R Datasheet - Page 5
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BC847BT T/R
Manufacturer Part Number
BC847BT T/R
Description
Semiconductors and Actives, Transistors, transistor, Discretes (diodes, transistors, thyristors ...), npn
Manufacturer
NXP Semiconductors
Datasheet
1.BC847BT_TR.pdf
(13 pages)
Philips Semiconductors
7. Characteristics
9397 750 14609
Product data sheet
Table 8:
T
[1]
[2]
Symbol Parameter
I
I
h
V
V
V
C
C
f
F
CBO
EBO
T
amb
FE
CEsat
BEsat
BE
c
e
Pulse test: t
V
= 25 C unless otherwise specified.
BE
decreases by approximately 2 mV/K with increasing temperature.
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage I
collector capacitance I
emitter capacitance
transition frequency
noise figure
Characteristics
h
h
h
h
h
h
FE
FE
FE
FE
FE
FE
p
group A
group B
group C
group A
group B
group C
300 s;
Rev. 06 — 19 May 2005
0.02.
Conditions
V
V
T
V
V
V
V
V
V
V
V
I
I
I
I
I
f = 1 MHz
I
f = 1 MHz
I
f = 100 MHz
I
R
B = 200 Hz
C
C
C
C
C
C
E
C
C
C
j
CB
CB
EB
CE
CE
CE
CE
CE
CE
CE
S
= 150 C
= i
= 10 mA; I
= 100 mA; I
= 10 mA; I
= 100 mA; I
= 2 mA; V
= 10 mA; V
= i
= 10 mA; V
= 200 A; V
= 2 k ; f = 1 kHz;
= 5 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
e
c
= 0 A; V
= 0 A; V
45 V, 100 mA NPN general-purpose transistors
E
C
C
C
C
C
C
C
CE
E
E
B
B
= 0 A
= 10 A
= 10 A
= 10 A
= 2 mA
= 2 mA
= 2 mA
= 2 mA
CE
CE
B
B
CE
= 0.5 mA
= 0.5 mA
CB
EB
= 0 A
= 0 A;
= 5 V
= 5 mA
= 5 mA
= 5 V
= 5 V;
BC847/BC547 series
= 5 V;
= 10 V;
= 0.5 V;
[1]
[2]
[2]
[2]
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Min
-
-
-
-
-
-
110
110
200
420
-
-
-
-
580
-
-
-
100
-
Typ
-
-
-
90
150
270
-
180
290
520
90
200
700
900
660
-
-
11
-
2
100
Max
15
5
-
-
-
800
220
450
800
200
400
-
-
700
770
1.5
-
-
10
Unit
nA
nA
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
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A