M95256-RMB6TG STMicroelectronics, M95256-RMB6TG Datasheet - Page 36

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M95256-RMB6TG

Manufacturer Part Number
M95256-RMB6TG
Description
EEPROM 256 Kbit SPI EEPROM 20 MHz High Speed
Manufacturer
STMicroelectronics
Datasheet

Specifications of M95256-RMB6TG

Product Category
EEPROM
Rohs
yes

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DC and AC parameters
Table 18.
1. If the application uses the M95256-DF devices at 2.5 V V
2. Characterized only, not tested in production.
36/53
Symbol
characteristics (M95256-W, device grade
I
CC0
I
V
V
I
V
I
CC1
V
I
LO
CC
OH
OL
LI
IH
IL
(2)
DC characteristics (M95256-DF, device grade 6)
Input leakage
current
Output leakage
current
Supply current
(Read)
Supply current
(Write)
Supply current
(Standby)
Input low voltage
Input high voltage
Output low voltage
Output high voltage
Parameter
V
S = V
V
at 5 MHz, Q = open
V
V
1.7 V V
1.7 V V
I
I
OL
OH
IN
CC
CC
CC
= 0.15 mA, V
6), rather than to the above table.
= V
= –0.1 mA, V
= 1.7 V, C = 0.1 V
= 1.7 V, during t
= 1.7 V, S = V
CC
SS
, voltage applied on Q = V
CC
CC
Doc ID 12276 Rev 19
or V
< 2.5 V
< 2.5 V
Test conditions
CC
CC
CC
CC
CC
= 1.7 V
= 1.7 V
W
, V
5.5 V and –40 °C T
, S = V
CC
IN
or 0.9 V
M95256-W M95256-R M95256-DR M95256-DF
= V
CC
SS
(1)
or V
CC
SS
,
CC
or V
A
CC
+85 °C, please refer to
0.75 V
0.8 V
–0.45
Min.
CC
CC
0.25 V
V
Max.
Table 16: DC
CC
± 2
± 2
0.3
2
3
1
+1
CC
Unit
mA
mA
µA
µA
µA
V
V
V
V

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