SST25VF010-20-4C-SAE Microchip Technology, SST25VF010-20-4C-SAE Datasheet - Page 9
![no-image](/images/manufacturer_photos/0/4/439/microchip_technology_sml.jpg)
SST25VF010-20-4C-SAE
Manufacturer Part Number
SST25VF010-20-4C-SAE
Description
Flash 128K X 8 14 s
Manufacturer
Microchip Technology
Datasheet
1.SST25VF010-20-4C-QAE.pdf
(22 pages)
Specifications of SST25VF010-20-4C-SAE
Product Category
Flash
Rohs
yes
Memory Type
NAND Flash
Memory Size
1 Mbit
Architecture
Sectored
Interface Type
SPI
Access Time
20 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.7 V
Maximum Operating Current
10 mA
Operating Temperature
+ 70 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8
Organization
32 KB
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SST25VF010-20-4C-SAE
Manufacturer:
SST
Quantity:
20 000
Company:
Part Number:
SST25VF010-20-4C-SAE-CT010
Manufacturer:
RENESAS
Quantity:
3 250
Company:
Part Number:
SST25VF010-20-4C-SAE-CT010
Manufacturer:
SST
Quantity:
8 000
Part Number:
SST25VF010-20-4C-SAE-T
Manufacturer:
SST
Quantity:
20 000
1 Mbit SPI Serial Flash
SST25VF010
Auto Address Increment (AAI) Program
The AAI program instruction allows multiple bytes of data to
be programmed without re-issuing the next sequential
address location. This feature decreases total program-
ming time when the entire memory array is to be pro-
grammed. An AAI program instruction pointing to a
protected memory area will be ignored. The selected
address range must be in the erased state (FFH) when ini-
tiating an AAI program instruction.
Prior to any write operation, the Write-Enable (WREN)
instruction must be executed. The AAI program instruction
is initiated by executing an 8-bit command, AFH, followed
by address bits [A
is input sequentially from MSB (bit 7) to LSB (bit 0). CE#
must be driven high before the AAI program instruction is
executed. The user must poll the BUSY bit in the software
©2006 Silicon Storage Technology, Inc.
SCK
SCK
CE#
CE#
FIGURE 6: A
SO
SI
SI
MODE 3
MODE 0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
0 1 2 3 4 5 6 7 8
23
UTO
-A
AF
AF
0
]. Following the addresses, the data
A
DDRESS
A[23:16] A[15:8]
Last Data Byte
I
15 16
NCREMENT
23 24
A[7:0]
31
(AAI) P
T
32 33 34 35 36 37 38 39
BP
Data Byte 1
0 1 2 3 4 5 6 7
Write Disable (WRDI)
Instruction to terminate
AAI Operation
ROGRAM
04
9
status register or wait T
nal self-timed Byte-Program cycle. Once the device com-
pletes programming byte, the next sequential address may
be program, enter the 8-bit command, AFH, followed by the
data to be programmed. When the last desired byte had
been programmed, execute the Write-Disable (WRDI)
instruction, 04H, to terminate AAI. After execution of the
WRDI command, the user must poll the Status register to
ensure the device completes programming. See Figure 6
for AAI programming sequence.
There is no wrap mode during AAI programming; once the
highest unprotected memory address is reached, the
device will exit AAI operation and reset the Write-Enable-
Latch bit (WEL = 0).
S
EQUENCE
T
BP
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
Read Status Register (RDSR)
Instruction to verify end of
AAI Operation
AF
05
BP
for the completion of each inter-
Data Byte 2
D
OUT
S71233-05-000
T BP
Data Sheet
1233 F06.1
0 1
1/06