NCN6010DTBR2 ON Semiconductor, NCN6010DTBR2 Datasheet - Page 6

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NCN6010DTBR2

Manufacturer Part Number
NCN6010DTBR2
Description
IC LEVEL SHIFTER SIMCARD 14TSSOP
Manufacturer
ON Semiconductor
Datasheet

Specifications of NCN6010DTBR2

Logic Function
Level Shifter
Input Type
Logic
Output Type
Logic
Differential - Input:output
No/No
Propagation Delay (max)
50ns
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-25°C ~ 85°C
Package / Case
14-TSSOP
Supply Voltage
2.7 V ~ 3.6 V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Number Of Channels
-
Data Rate
-
Other names
NCN6010DTBR2OSTR

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5. Internal NMOS device, biased to V
6. The SIM_CLK clock can operate up to 10 MHz, but the rise and fall time are not guaranteed to be fully within the ISO7816 specification over
7. Digital inputs undershoot t -0.30 V, Digital inputs overshoot t 0.30 V.
SIM INTERFACE SECTION
SIM_VCC = +5.0 V
SIM_VCC = +3.0 V
SIM_VCC = +5.0 V
SIM_VCC = +3.0 V
SIM_VCC = +5.0 V
SIM_VCC = +3.0 V
I/O Pull Up Resistor
Card I/O Pull Up Resistor
Output RESET V
Output RESET V
Output RESET Rise Time @ Cout = 50 pF
Output RESET Fall Time @ Cout = 50 pF
Output RESET V
Output RESET V
Output RESET Rise Time @ Cout = 50 pF
Output RESET Fall Time @ Cout = 50 pF
Output Duty Cycle
Output Frequency
Output SIM_CLK Rise Time @ Cout = 50 pF
Output SIM_CLK Fall Time @ Cout = 50 pF
Output V
Output V
Output Duty Cycle
Output Frequency
Output SIM_CLK Rise Time @ Cout = 50 pF
Output SIM_CLK Fall Time @ Cout = 50 pF
Output V
Output V
SIM_I/O Data Transfer Frequency
SIM_I/O Rise Time @ Cout = 50 pF
SIM_I/O Fall Time @ Cout = 50 pF
Output V
Output V
SIM_I/O Data Transfer Frequency
SIM_I/O Rise Time @ Cout = 50 pF
SIM_I/O Fall Time @ Cout = 50 pF
Output V
Output V
test.
the temperature range. Typically, tr and tf are 12 ns @ CRD_CLK = 10 MHz.
V
V
IL
IL
I/O = 0 V
I/O = 0 V
OH
OL
OH
OL
OH
OL
OH
OL
@ Isim_clk = -200 mA
@ Isim_clk = -20 mA
@ I
@ I
@ Isim_clk = +20 mA
@ Isim_clk = +20 mA
@ I
@ I
SIM_IO
SIM_IO
SIM_IO
SIM_IO
OH
OL
OH
OL
Rating
@ Isim_rst = -200 mA
@ Isim_rst = -200 mA
@ Isim_rst = +200 mA
@ Isim_rst = +200 mA
= -1.0 mA,
= -1.0 mA,
= +20 mA, V
= +20 mA, V
(Note 7)
DD
IH
IH
, provides low impedance when SIM_V
= V
= V
DD
DD
SIM_I/O_
SIM_RST
SIM_CLK
SIM_I/O
Symbol
Note 5
Note 5
Note 6
I/O_
http://onsemi.com
RP
RP
NCN6010
Pin
6
11
11
8
9
5
SIM_VCC - 0.7
0.8 * SIM_VCC
0.7 * SIM_VCC
0.7 * SIM_VCC
0.7 * SIM_VCC
0.7 * SIM_VCC
CC
is disconnected to sustain GSM 11.11-200 mA input current
Min
40
40
13
13
0
0
0
0
0
0
Typ
15
15
20
20
-
-
0.2 * SIM_VCC
0.2 * SIM_VCC
SIM_VCC
SIM_VCC
SIM_VCC
SIM_VCC
SIM_VCC
SIM_VCC
Max
400
400
400
400
160
160
0.6
5.0
0.5
5.0
0.8
0.8
0.4
0.8
0.8
0.4
60
18
18
60
18
18
-
-
MHz
MHz
Unit
kHz
kHz
kW
kW
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
ms
ms
%
%
V
V
V
V
V
V
V
V
V
V
V
V

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