MAX11014BGTM+ Maxim Integrated, MAX11014BGTM+ Datasheet - Page 14

• Manufacturer Part Number: MAX11014BGTM+
• Description: Special Purpose Amplifiers Auto RF MESFET Amp Drain-Current Cntrlr
• Manufacturer: Maxim Integrated
• Series: MAX11014, MAX11015r

Specifications of MAX11014BGTM+

• Rohs: yes
• Common Mode Rejection Ratio (min): 90 dB
• Operating Supply Voltage: 0.5 V to 11 V
• Supply Current: 2.8 mA
• Maximum Power Dissipation: 2162.2 mW
• Maximum Operating Temperature: + 105 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Package / Case: TQFN-48
• Available Set Gain: 13.98 dB

Automatic RF MESFET Amplifier
Drain-Current Controllers
14
16, 28, 29,
11, 27
12, 26
34–37
PIN
______________________________________________________________________________________
10
13
14
15
17
18
19
20
21
22
23
24
25
1
2
3
4
5
6
7
8
9
ACLAMP2
ACLAMP1
PGAOUT1
PGAOUT2
DOUT/A1
GATEV
DIN/SDA
REFDAC
REFADC
ADCIN1
ADCIN2
GATE2
GATE1
NAME
AGND
DXN1
DXN2
DXP1
DXP2
AV
FILT1
FILT2
FILT3
FILT4
AV
N.C.
DD
SS
SS
Serial Data Input. Data is latched into the serial interface on the rising edge of SCLK in SPI mode.
Connect a pullup resistor to SDA in I
Serial Data Output in SPI Mode/Address Select 1 in I
SCLK. DOUT is high impedance when CS is high. Connect A1 to DV
address to I
Analog Input 1
Analog Input 2
Remote-Diode Current Sink. Connect the emitter of a base-emitter junction remote npn transistor to
DXN1.
Remote-Diode Current Source. Connect DXP1 to the base/collector of a remote temperature-sensing
npn transistor. Do not leave DXP1 open; connect to DXN1 if no remote diode is used.
Remote-Diode Current Sink. Connect the emitter of a base-emitter junction remote npn transistor to
DXN2.
Remote-Diode Current Source. Connect DXP2 to the base/collector of a remote temperature-sensing
npn transistor. Do not leave DXP2 open; connect to DXN2 if no remote diode is used.
DAC Reference Input/Output. Connect a 0.1µF capacitor to AGND in external reference mode. See
the HCFG (Read/Write) section.
ADC Reference Input/Output. Connect a 0.1µF capacitor to AGND in external reference mode. See
the HCFG (Read/Write) section.
Positive Analog Supply Voltage. Set AV
0.1µF capacitor in parallel to AGND.
Analog Ground
MESFET2 External Clamping Voltage Input
MESFET2 Gate Connection. See the Gate-Drive Amplifiers section.
Gate-Drive Amplifier Negative Power-Supply Input. Set GATEV
externally to AV
No Connection. Not internally connected.
MESFET1 External Clamping Voltage Input
MESFET1 Gate Connection. See the Gate-Drive Amplifiers section.
Channel 1 Filter 1 Input. See Figures 5 and 6.
Channel 1 Filter 2 Input. See Figures 5 and 6.
Channel 2 Filter 3 Input. See Figures 5 and 6.
Channel 2 Filter 4 Input. See Figures 5 and 6.
Channel 1 Amplifier Voltage Output. See the PGAOUT Outputs section and Figures 5 and 6.
Channel 2 Amplifier Voltage Output. See the PGAOUT Outputs section and Figures 5 and 6.
Negative Analog Supply Voltage. Set AV
GATEV
SS
. Bypass with a 1µF and a 0.1µF capacitor in parallel to AGND.
2
C mode.
SS
. Bypass with a 1µF and a 0.1µF capacitor in parallel to AGND.
2
C mode.
DD
SS
between +4.75V and +5.25V. Bypass with a 1µF and a
between -4.75V and -5.5V. Connect externally to
FUNCTION
2
C Mode. Data transitions on the falling edge of
SS
between -4.75V and -5.5V. Connect
DD
or DGND to set the device
Pin Description