NTS0101GW,125 NXP Semiconductors, NTS0101GW,125 Datasheet
NTS0101GW,125
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NTS0101GW,125 Summary of contents
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NTS0101 Dual supply translating transceiver; open drain; auto direction sensing Rev. 4 — 4 September 2012 1. General description The NTS0101 is a 1-bit, dual supply translating transceiver with auto direction sensing, that enables bidirectional voltage level translation. It features ...
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... NXP Semiconductors 4. Ordering information Table 1. Ordering information Type number Package Temperature range 40 C to +125 C NTS0101GW 40 C to +125 C NTS0101GV 40 C to +125 C NTS0101GM 40 C to +125 C NTS0101GF 40 C to +125 C NTS0101GS 5. Marking Table 2. Marking Type number ...
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... NXP Semiconductors 7. Pinning information 7.1 Pinning NTS0101 CC(A) CC(B) GND 001aan318 Fig 2. Pin configuration SOT363 and SOT457 7.2 Pin description Table 3. Pin description Symbol Pin V 1 CC(A) GND CC(B) 8. Functional description [1] Table 4. Function table Supply voltage V V CC(A) CC(B) 1 ...
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... NXP Semiconductors 9. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter V supply voltage A CC(A) V supply voltage B CC(B) V input voltage I V output voltage O I input clamping current IK I output clamping current ...
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... NXP Semiconductors 11. Static characteristics Table 7. Typical static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); T Symbol Parameter Conditions I input leakage OE input current V CC(B) I OFF-state output port current V CC(B) I power-off A port; V OFF leakage current V CC(A) B port CC(B) ...
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... NXP Semiconductors Table 9. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions V LOW-level port IL input voltage V CC(A) V CC(B) OE input V CC(A) V CC(B) = 20 A V HIGH-level output voltage V CC(A) V CC(B) V LOW-level port output voltage 0. CC(A) ...
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... NXP Semiconductors 12. Dynamic characteristics Dynamic characteristics for temperature range 40 C to +85 C Table 10. Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions = 1.8 V 0. CC(A) t HIGH to LOW PHL propagation delay t LOW to HIGH PLH propagation delay ...
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... NXP Semiconductors Dynamic characteristics for temperature range 40 C to +85 C Table 10. Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions t HIGH to LOW A port THL output transition B port time t pulse width data inputs W f data rate data = 3.3 V ...
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... NXP Semiconductors Dynamic characteristics for temperature range 40 C to +125 C Table 11. Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions = 1.8 V 0. CC(A) t HIGH to LOW PHL propagation delay t LOW to HIGH PLH propagation delay t HIGH to LOW ...
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... NXP Semiconductors Dynamic characteristics for temperature range 40 C to +125 C Table 11. Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions t pulse width data inputs W f data rate data = 3.3 V 0 CC(A) t HIGH to LOW PHL propagation delay ...
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... NXP Semiconductors 13. Waveforms Measurement points are given in V and V are typical output voltage levels that occur with the output load Fig 5. The data input ( data output (B, A) propagation delay times OE input output LOW-to-OFF OFF-to-LOW output HIGH-to-OFF ...
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... NXP Semiconductors Test data is given in Table All input pulses are supplied by generators having the following characteristics: PRR 10 MHz Load resistance Load capacitance including jig and probe capacitance External voltage for measuring switching times. EXT Fig 7. Test circuit for measuring switching times Table 13 ...
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... NXP Semiconductors 14. Application information 14.1 Applications Voltage level-translation applications. The NTS0101 can be used in point-to-point applications to interface between devices or systems operating at different supply voltages. The device is primarily targeted at I Although it is suitable for use in applications where push-pull drivers are connected to the ports. the NTB0101 may be a preferable option. ...
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... NXP Semiconductors The gate bias voltage of the pass gate transistor (T3) is set at approximately one threshold voltage above the V transition, the output one-shot accelerates the output transition by switching on the PMOS transistors (T1, T2). This bypasses the 10 k pull-up resistors and increases the current drive capability ...
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... NXP Semiconductors 14.7 Pull-up or pull-down resistors on I/Os lines The A port I/O has an internal 10 k pull-up resistor to V internal 10 k pull-up resistor to V add an external resistor in parallel with the internal 10 k. This affects the V OE goes LOW, the internal pull-ups of the NTS0101 are disabled. ...
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... NXP Semiconductors 15. Package outline Plastic surface-mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.30 0.25 mm 0.1 0.8 0.20 0.10 OUTLINE VERSION IEC SOT363 Fig 10. Package outline SOT363 (SC-88) NTS0101 Product data sheet Dual supply translating transceiver; open drain; auto direction sensing ...
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... NXP Semiconductors Plastic surface-mounted package (TSOP6); 6 leads y 6 pin 1 index 1 e DIMENSIONS (mm are the original dimensions) UNIT 0.1 1.1 0.40 0.26 mm 0.013 0.25 0.9 0.10 OUTLINE VERSION IEC SOT457 Fig 11. Package outline SOT457 (TSOP6) NTS0101 Product data sheet Dual supply translating transceiver; open drain; auto direction sensing ...
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... NXP Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1. (2) terminal 1 index area Dimensions (mm are the original dimensions) (1) Unit max 0.5 0.04 0.25 1.50 mm nom 0.20 1.45 min 0.17 1.40 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. Outline version ...
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... NXP Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 0 6× (1) terminal 1 index area DIMENSIONS (mm are the original dimensions UNIT b D max max 0.20 1.05 mm 0.5 0.04 0.12 0.95 Note 1. Can be visible in some manufacturing processes. OUTLINE VERSION IEC SOT891 Fig 13. Package outline SOT891 (XSON6) ...
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... NXP Semiconductors XSON6: extremely thin small outline package; no leads; 6 terminals; body 1.0 x 1 (6×) terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 1.05 mm nom 0.15 1.00 min 0.12 0.95 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. Outline version IEC SOT1202 Fig 14. Package outline SOT1202 (XSON6) ...
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... NXP Semiconductors 16. Abbreviations Table 14. Abbreviations Acronym Description CDM Charged Device Model DUT Device Under Test ESD ElectroStatic Discharge GPIO General Purpose Input Output HBM Human Body Model Inter-Integrated Circuit MM Machine Model PCB Printed Circuit Board PMOS Positive Metal Oxide Semiconductor ...
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... Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... Dual supply translating transceiver; open drain; auto direction sensing NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... NXP Semiconductors 20. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 5 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 7 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 7.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 8 Functional description . . . . . . . . . . . . . . . . . . . 3 9 Limiting values Recommended operating conditions Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 13 Waveforms ...