NTB0101GW,125 NXP Semiconductors, NTB0101GW,125 Datasheet

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NTB0101GW,125

Manufacturer Part Number
NTB0101GW,125
Description
Translation - Voltage Levels 5.9ns 5.5V 250mW
Manufacturer
NXP Semiconductors
Datasheet

Specifications of NTB0101GW,125

Rohs
yes
Propagation Delay Time
5.9 ns
Supply Voltage - Max
5.5 V
Supply Voltage - Min
1.2 V
Maximum Operating Temperature
+ 125 C
Package / Case
SC-88
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 40 C
Factory Pack Quantity
3000

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTB0101GW,125
Manufacturer:
NXP/恩智浦
Quantity:
20 000
1. General description
2. Features and benefits
The NTB0101 is a 1-bit, dual supply translating transceiver with auto direction sensing,
that enables bidirectional voltage level translation. It features two 1-bit input-output ports
(A and B), one output enable input (OE) and two supply pins (V
can be supplied at any voltage between 1.2 V and 3.6 V and V
voltage between 1.65 V and 5.5 V, making the device suitable for translating between any
of the low voltage nodes (1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V and 5.0 V).
Pins A and OE are referenced to V
pin OE causes the outputs to assume a high-impedance OFF-state. This device is fully
specified for partial power-down applications using I
output, preventing the damaging backflow current through the device when it is powered
down.
NTB0101
Dual supply translating transceiver; auto direction sensing;
3-state
Rev. 4 — 6 August 2012
Wide supply voltage range:
I
Inputs accept voltages up to 5.5 V
ESD protection:
Latch-up performance exceeds 100 mA per JESD 78B Class II
Multiple package options
Specified from 40 C to +85 C and 40 C to +125 C
OFF
V
HBM JESD22-A114E Class 2 exceeds 2500 V for A port
HBM JESD22-A114E Class 3B exceeds 15000 V for B port
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101E exceeds 1500 V
circuitry provides partial Power-down mode operation
CC(A)
: 1.2 V to 3.6 V and V
CC(B)
CC(A)
: 1.65 V to 5.5 V
and pin B is referenced to V
OFF
. The I
CC(B)
OFF
CC(A)
circuitry disables the
can be supplied at any
Product data sheet
CC(B)
and V
. A LOW level at
CC(B)
). V
CC(A)

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NTB0101GW,125 Summary of contents

Page 1

NTB0101 Dual supply translating transceiver; auto direction sensing; 3-state Rev. 4 — 6 August 2012 1. General description The NTB0101 is a 1-bit, dual supply translating transceiver with auto direction sensing, that enables bidirectional voltage level translation. It features two ...

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... NXP Semiconductors 3. Ordering information Table 1. Ordering information Type number Package Temperature range 40 C to +125 C NTB0101GW 40 C to +125 C NTB0101GV 40 C to +125 C NTB0101GM 40 C to +125 C NTB0101GF 40 C to +125 C NTB0101GS 4. Marking Table 2. Marking Type number ...

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... NXP Semiconductors 6. Pinning information 6.1 Pinning NTB0101 CC(A) CC(B) GND 001aan312 Fig 2. Pin configuration SOT363 and SOT457 6.2 Pin description Table 3. Pin description Symbol Pin V 1 CC(A) GND CC(B) 7. Functional description [1] Table 4. Function table Supply voltage V V CC(A) CC(B) 1 ...

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... NXP Semiconductors 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter V supply voltage A CC(A) V supply voltage B CC(B) V input voltage I V output voltage O I input clamping current IK I output clamping current ...

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... NXP Semiconductors 10. Static characteristics Table 7. Typical static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); T Symbol Parameter Conditions V HIGH-level A port output voltage V LOW-level A port output voltage I input leakage OE input current V CC(B) I OFF-state output port ...

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... NXP Semiconductors Table 9. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions V HIGH-level port and OE input IH input voltage V CC(A) V CC(B) V LOW-level port and OE input IL input voltage V CC(A) V CC(B) = 20 A V HIGH-level output voltage A port port  ...

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... NXP Semiconductors Table 9. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions I supply current CC( LOW; V CC(A) V CC( HIGH; V CC(A) V CC(B) V CC(A) V CC(A) I CC( LOW; V CC(A) V CC( HIGH; V CC(A) V CC(B) V CC(A) V CC( CC(A) V CC(A) V CC(B) [ the supply voltage associated with the input. ...

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... NXP Semiconductors Typical dynamic characteristics for temperature 25 C Table 10. Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions t transition time A port t B port t pulse width data inputs W f data rate data [ the same as t and ...

Page 9

... NXP Semiconductors Dynamic characteristics for temperature range 40 C to +85 C Table 11. Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions = 2.5 V  0 CC(A) t propagation delay enable time disable time external load dis ...

Page 10

... NXP Semiconductors Dynamic characteristics for temperature range 40 C to +125 C Table 12. Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions = 1.5 V  0 CC(A) t propagation delay enable time disable time external load dis ...

Page 11

... NXP Semiconductors Dynamic characteristics for temperature range 40 C to +125 C Table 12. Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions = 3.3 V  0 CC(A) t propagation delay enable time disable time external load dis ...

Page 12

... NXP Semiconductors Table 13. Typical power dissipation capacitance Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions = 25 C T amb C power outputs enabled dissipation A port: (direction capacitance A port: (direction port: (direction port: (direction outputs disabled GND ...

Page 13

... NXP Semiconductors OE input output LOW-to-OFF OFF-to-LOW output HIGH-to-OFF OFF-to-HIGH Measurement points are given in V and V are typical output voltage levels that occur with the output load Fig 6. Enable and disable times Table 14. Measurement points Supply voltage ...

Page 14

... NXP Semiconductors Test data is given in Table All input pulses are supplied by generators having the following characteristics: PRR  10 MHz Load resistance Load capacitance including jig and probe capacitance External voltage for measuring switching times. EXT Fig 7. Test circuit for measuring switching times Table 15 ...

Page 15

... NXP Semiconductors 13. Application information 13.1 Applications Voltage level-translation applications. The NTB0101 can be used to interface between devices or systems operating at different supply voltages. See operating circuit using the NTB0101. 1.8 V 0.1 μF Fig 8. Typical operating circuit NTB0101 Product data sheet Dual supply translating transceiver; auto direction sensing; 3-state 1 ...

Page 16

... NXP Semiconductors 13.2 Architecture The architecture of the NTB0101 is shown in extra input signal to control the direction of data flow from from static state, the output drivers of the NTB0101 can maintain a defined output level, but the output architecture is designed to be weak, so that they can be overdriven by an external driver when data on the bus starts flowing in the opposite direction ...

Page 17

... NXP Semiconductors 13.3 Input driver requirements For correct operation, the device driving the data I/Os of the NTB0101 must have a minimum drive capability of 2 mA See input voltage input threshold voltage of the NTB0101 (typically supply voltage of the external driver. D Fig 10. Typical input current versus input voltage graph 13 ...

Page 18

... NXP Semiconductors 14. Package outline Plastic surface-mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.30 0.25 mm 0.1 0.8 0.20 0.10 OUTLINE VERSION IEC SOT363 Fig 11. Package outline SOT363 (SC-88) NTB0101 Product data sheet Dual supply translating transceiver; auto direction sensing; 3-state ...

Page 19

... NXP Semiconductors Plastic surface-mounted package (TSOP6); 6 leads y 6 pin 1 index 1 e DIMENSIONS (mm are the original dimensions) UNIT 0.1 1.1 0.40 0.26 mm 0.013 0.25 0.9 0.10 OUTLINE VERSION IEC SOT457 Fig 12. Package outline SOT457 (TSOP6) NTB0101 Product data sheet Dual supply translating transceiver; auto direction sensing; 3-state ...

Page 20

... NXP Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1. (2) terminal 1 index area Dimensions (mm are the original dimensions) (1) Unit max 0.5 0.04 0.25 1.50 mm nom 0.20 1.45 min 0.17 1.40 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. Outline version ...

Page 21

... NXP Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 0 6× (1) terminal 1 index area DIMENSIONS (mm are the original dimensions UNIT b D max max 0.20 1.05 mm 0.5 0.04 0.12 0.95 Note 1. Can be visible in some manufacturing processes. OUTLINE VERSION IEC SOT891 Fig 14. Package outline SOT891 (XSON6) ...

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... NXP Semiconductors XSON6: extremely thin small outline package; no leads; 6 terminals; body 1.0 x 1 (6×) terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 1.05 mm nom 0.15 1.00 min 0.12 0.95 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. Outline version IEC SOT1202 Fig 15. Package outline SOT1202 (XSON6) ...

Page 23

... NXP Semiconductors 15. Abbreviations Table 16. Abbreviations Acronym Description CDM Charged Device Model DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model NMOS N-type Metal Oxide Semiconductor PMOS P-type Metal Oxide Semiconductor PRR Pulse Repetition Rate 16. Revision history Table 17. ...

Page 24

... Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 25

... Dual supply translating transceiver; auto direction sensing; 3-state NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 26

... NXP Semiconductors 19. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Functional description . . . . . . . . . . . . . . . . . . . 3 8 Limiting values Recommended operating conditions Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 12 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 13 Application information ...

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