NTB0101GW,125 NXP Semiconductors, NTB0101GW,125 Datasheet - Page 23

• Manufacturer Part Number: NTB0101GW,125
• Description: Translation - Voltage Levels 5.9ns 5.5V 250mW
• Manufacturer: NXP Semiconductors

Specifications of NTB0101GW,125

• Rohs: yes
• Propagation Delay Time: 5.9 ns
• Supply Voltage - Max: 5.5 V
• Supply Voltage - Min: 1.2 V
• Maximum Operating Temperature: + 125 C
• Package / Case: SC-88
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 3000

NXP Semiconductors
15. Abbreviations
Table 16.
16. Revision history
Table 17.
NTB0101
Product data sheet
Acronym
CDM
DUT
ESD
HBM
MM
NMOS
PMOS
PRR
Document ID
NTB0101 v.4
Modifications:
NTB0101 v.3
Modifications:
NTB0101 v.2
NTB0101 v.1
Abbreviations
Revision history
Description
Charged Device Model
Device Under Test
ElectroStatic Discharge
Human Body Model
Machine Model
N-type Metal Oxide Semiconductor
P-type Metal Oxide Semiconductor
Pulse Repetition Rate
Release date
20120806
20111110
20110505
20101230
•
•
Package outline drawing of SOT886
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Dual supply translating transceiver; auto direction sensing; 3-state
Product data sheet
Data sheet status
Product data sheet
Product data sheet
Product data sheet
Rev. 4 — 6 August 2012
(Figure
Change notice
-
-
-
-
13) modified.
NTB0101 v.3
NTB0101 v.2
NTB0101 v.1
-
Supersedes
NTB0101
© NXP B.V. 2012. All rights reserved.
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