AT24C01BN-SH-B Atmel, AT24C01BN-SH-B Datasheet - Page 9

IC EEPROM 1KBIT 1MHZ 8SOIC

AT24C01BN-SH-B

Manufacturer Part Number
AT24C01BN-SH-B
Description
IC EEPROM 1KBIT 1MHZ 8SOIC
Manufacturer
Atmel
Datasheets

Specifications of AT24C01BN-SH-B

Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
1K (128 x 8)
Speed
400kHz, 1MHz
Interface
I²C, 2-Wire Serial
Voltage - Supply
1.8 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Organization
128 K x 8
Interface Type
2-Wire
Maximum Clock Frequency
1 MHz
Access Time
550 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
1.8 V
Maximum Operating Current
3 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Operating Supply Voltage
1.8 V, 5.5 V
Memory Configuration
128 X 8
Clock Frequency
1MHz
Supply Voltage Range
1.8V To 5.5V
Memory Case Style
SOIC
No. Of Pins
8
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Device Addressing
Write Operations
Read Operations
5156C–SEEPR–4/07
The 1K EEPROM device requires an 8-bit device address word following a start condi-
tion to enable the chip for a read or write operation (refer to Figure 7).
The device address word consists of a mandatory one, zero sequence for the first four
most significant bits as shown. This is common to all the EEPROM devices.
The next 3 bits are the A2, A1 and A0 device address bits for the 1K EEPROM. These 3
bits must compare to their corresponding hard-wired input pins.
The eighth bit of the device address is the read/write operation select bit. A read opera-
tion is initiated if this bit is high and a write operation is initiated if this bit is low.
Upon a compare of the device address, the EEPROM will output a zero. If a compare is
not made, the chip will return to a standby state.
BYTE WRITE: A write operation requires an 8-bit data word address following the
device address word and acknowledgment. Upon receipt of this address, the EEPROM
will again respond with a zero and then clock in the first 8-bit data word. Following
receipt of the 8-bit data word, the EEPROM will output a zero and the addressing
device, such as a microcontroller, must terminate the write sequence with a stop condi-
tion. At this time the EEPROM enters an internally timed write cycle, t
nonvolatile memory. All inputs are disabled during this write cycle and the EEPROM will
not respond until the write is complete (see Figure 8 on page 11).
PAGE WRITE: The 1K EEPROM is capable of an 8-byte page write.
A page write is initiated the same as a byte write, but the microcontroller does not send
a stop condition after the first data word is clocked in. Instead, after the EEPROM
acknowledges receipt of the first data word, the microcontroller can transmit up to seven
data words. The EEPROM will respond with a zero after each data word received. The
microcontroller must terminate the page write sequence with a stop condition (see Fig-
ure 9 on page 11).
The data word address lower three bits are internally incremented following the receipt
of each data word. The higher data word address bits are not incremented, retaining the
memory page row location. When the word address, internally generated, reaches the
page boundary, the following byte is placed at the beginning of the same page. If more
than eight data words are transmitted to the EEPROM, the data word address will “roll
over” and previous data will be overwritten.
ACKNOWLEDGE POLLING: Once the internally timed write cycle has started and the
EEPROM inputs are disabled, acknowledge polling can be initiated. This involves send-
ing a start condition followed by the device address word. The read/write bit is
representative of the operation desired. Only if the internal write cycle has completed
will the EEPROM respond with a zero allowing the read or write sequence to continue.
Read operations are initiated the same way as write operations with the exception that
the read/write select bit in the device address word is set to one. There are three read
operations: current address read, random address read and sequential read.
CURRENT ADDRESS READ: The internal data word address counter maintains the
last address accessed during the last read or write operation, incremented by one. This
address stays valid between operations as long as the chip power is maintained. The
address “roll over” during read is from the last byte of the last memory page to the first
WR
, to the
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