IS42S16400F-6TL ISSI, Integrated Silicon Solution Inc, IS42S16400F-6TL Datasheet - Page 21

IC SDRAM 64MBIT 166MHZ 54TSOP

IS42S16400F-6TL

Manufacturer Part Number
IS42S16400F-6TL
Description
IC SDRAM 64MBIT 166MHZ 54TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheets

Specifications of IS42S16400F-6TL

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
64M (4M x 16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-TSOP II
Organization
4Mx16
Density
64Mb
Address Bus
14b
Access Time (max)
6/5.4ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
130mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Data Bus Width
16 bit
Maximum Clock Frequency
166 MHz
Access Time
6 ns, 5.4 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3 V
Maximum Operating Current
130 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
706-1075
IS42S16400F-6TL

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IS42S16400F
IC42S16400F
diagram for each possible CAS latency; data element n +
3 is either the last of a burst of four or the last desired of
a longer burst. Following the PRECHARGE command, a
subsequent command to the same bank cannot be issued
until t
hidden during the access of the last data element(s).
In the case of a fixed-length burst being executed to
completion, a PRECHARGE command issued at the
optimum time (as described above) provides the same
operation that would result from the same fixed-length
burst with auto precharge. The disadvantage of the PRE-
CHARGE command is that it requires that the command
and address buses be available at the appropriate time to
issue the command; the advantage of the PRECHARGE
command is that it can be used to truncate fixed-length
or full-page bursts.
CAS Latency
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
03/19/08
rp
is met. Note that part of the row precharge time is
COMMAND
COMMAND
CLK
CLK
DQ
DQ
READ
READ
T0
T0
CAS Latency - 2
NOP
NOP
CAS Latency - 3
T1
T1
t
LZ
t
AC
Full-page READ bursts can be truncated with the BURST
TERMINATE command, and fixed-length READ bursts
may be truncated with a BURST TERMINATE command,
provided that auto precharge was not activated.The BURST
TERMINATE command should be issued x cycles before
the clock edge at which the last desired data element is
valid, where x equals the CAS latency minus one. This is
shown in the READ Burst Termination diagram for each
possible CAS latency; data element n + 3 is the last desired
data element of a longer burst.
NOP
NOP
T2
T2
D
OUT
t
t
OH
LZ
t
AC
NOP
T3
T3
D
DON'T CARE
UNDEFINED
OUT
t
OH
T4
21

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