IS61WV5128BLL-10BLI ISSI, Integrated Silicon Solution Inc, IS61WV5128BLL-10BLI Datasheet - Page 15

• Manufacturer Part Number: IS61WV5128BLL-10BLI
• Description: IC SRAM 4MBIT 10NS 36MBGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61WV5128BLL-10BLI

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 4M (512K x 8)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 1.65 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 36-MBGA
• Density: 4Mb
• Access Time (max): 10ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 2.5/3.3V
• Address Bus: 19b
• Package Type: Mini BGA
• Operating Temp Range: -40C to 85C
• Number Of Ports: 1
• Supply Current: 40mA
• Operating Supply Voltage (min): 2.4V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 36
• Word Size: 8b
• Number Of Words: 512K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 706-1063; IS61WV5128BLL-10BLI

WRITE CYCLE NO. 3
IS61WV5128ALL/ALS, IS61WV5128BLL/BLS
IS64WV5128BLL/BLS
WRITE CYCLE NO. 2
Integrated Silicon Solution, Inc. — www.issi.com
Rev. I
08/10/09
Notes:
1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write,
2. I/O will assume the High-Z state if OE > V
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the Write.
ADDRESS
ADDRESS
D
D
OUT
OUT
WE
WE
D
D
OE
OE
CE
CE
IN
IN
LOW
LOW
LOW
t
SA
(1,2)
(WE Controlled: OE is LOW During Write Cycle)
t
DATA UNDEFINED
DATA UNDEFINED
SA
(WE Controlled: OE is HIGH During Write Cycle)
Ih
.
VALID ADDRESS
t
t
t
t
AW
AW
HZWE
HZWE
VALID ADDRESS
t
t
PWE1
WC
t
t
PWE2
WC
HIGH-Z
HIGH-Z
t
t
SD
SD
DATA
DATA
IN
IN
VALID
VALID
t
t
HD
HD
t
t
LZWE
LZWE
t
t
HA
HA
CE_WR2.eps
CE_WR3.eps
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