IS61WV5128BLL-10BLI ISSI, Integrated Silicon Solution Inc, IS61WV5128BLL-10BLI Datasheet - Page 5

• Manufacturer Part Number: IS61WV5128BLL-10BLI
• Description: IC SRAM 4MBIT 10NS 36MBGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61WV5128BLL-10BLI

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 4M (512K x 8)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 1.65 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 36-MBGA
• Density: 4Mb
• Access Time (max): 10ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 2.5/3.3V
• Address Bus: 19b
• Package Type: Mini BGA
• Operating Temp Range: -40C to 85C
• Number Of Ports: 1
• Supply Current: 40mA
• Operating Supply Voltage (min): 2.4V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 36
• Word Size: 8b
• Number Of Words: 512K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 706-1063; IS61WV5128BLL-10BLI

IS61WV5128ALL/ALS, IS61WV5128BLL/BLS
IS64WV5128BLL/BLS
TRUTH TABLE
CAPACITANCE
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
Integrated Silicon Solution, Inc. — www.issi.com
Rev. I
08/10/09
ABSOLUTE MAXIMUM RATINGS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
Mode
Not Selected
(Power-down)
Output Disabled H
Read
Write
Symbol
C
C
t
the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
Symbol
V
V
P
stg
In
I/o
terM
dd
t
Parameter
Terminal Voltage with Respect to GND
V
Storage Temperature
Power Dissipation
dd
Parameter
Input Capacitance
Input/Output Capacitance
A
Relates to GND
WE
(1,2)
H
X
= 25°C, f = 1 MHz, V
L
CE
H
L
L
L
OE
X
H
X
L
I/O Operation V
dd
= 3.3V.
High-Z
High-Z
(1)
d
d
out
In
Conditions
V
V
out
In
= 0V
DD
I
= 0V
sb
–0.5 to V
Current
1
I
I
I
–65 to +150
CC
CC
CC
, I
–0.3 to 4.0
sb
Value
2
1.0
dd
+ 0.5
Max.
6
8
Unit
°C
W
V
V
Unit
pF
pF
5