IS61WV5128BLL-10BLI ISSI, Integrated Silicon Solution Inc, IS61WV5128BLL-10BLI Datasheet - Page 4

IC SRAM 4MBIT 10NS 36MBGA

IS61WV5128BLL-10BLI

Manufacturer Part Number
IS61WV5128BLL-10BLI
Description
IC SRAM 4MBIT 10NS 36MBGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS61WV5128BLL-10BLI

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
4M (512K x 8)
Speed
10ns
Interface
Parallel
Voltage - Supply
1.65 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
36-MBGA
Density
4Mb
Access Time (max)
10ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
2.5/3.3V
Address Bus
19b
Package Type
Mini BGA
Operating Temp Range
-40C to 85C
Number Of Ports
1
Supply Current
40mA
Operating Supply Voltage (min)
2.4V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
36
Word Size
8b
Number Of Words
512K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
706-1063
IS61WV5128BLL-10BLI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS61WV5128BLL-10BLI
Manufacturer:
ISSI
Quantity:
1 000
Part Number:
IS61WV5128BLL-10BLI
Manufacturer:
LT
Quantity:
129
Part Number:
IS61WV5128BLL-10BLI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS61WV5128BLL-10BLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS61WV5128ALL/ALS, IS61WV5128BLL/BLS
IS64WV5128BLL/BLS
DC ELECTRICAL CHARACTERISTICS
V
Note:
1. V
DC ELECTRICAL CHARACTERISTICS
V
Note:
1. V
DC ELECTRICAL CHARACTERISTICS
V
Note:
1. V
4
DD
DD
DD
Symbol
V
V
V
V
I
I
V
Symbol
V
V
V
V
I
I
V
Symbol
V
V
V
V
I
I
V
lI
lo
lI
lo
lI
lo
Il
Il
Il
Ih
Ih
Ih
oh
ol
Ih
Il
oh
ol
Ih
Il
oh
ol
Ih
Il
(min.) = –0.3V DC; V
(min.) = –0.3V DC; V
= 3.3V + 5%
= 2.4V-3.6V
= 1.65V-2.2V
(min.) = –0.3V DC; V
(1)
(max.) = V
(max.) = V
(max.) = V
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
dd
dd
dd
+ 0.3V dC; V
+ 0.3V dC; V
+ 0.3V dC; V
Il
Il
Il
(min.) = –2.0V AC (pulse width <10 ns). Not 100% tested.
(min.) = –2.0V AC (pulse width <10 ns). Not 100% tested.
(min.) = –2.0V AC (pulse width <10 ns). Not 100% tested.
Ih
Ih
Ih
(max.) = V
(max.) = V
(max.) = V
(1)
(1)
dd
dd
dd
+ 2.0V AC (pulse width <10 ns). Not 100% tested.
+ 2.0V AC (pulse width <10 ns). Not 100% tested.
+ 2.0V AC (pulse width <10 ns). Not 100% tested.
Test Conditions
V
V
GND ≤ V
GND ≤ V
dd
dd
Test Conditions
V
V
GND ≤ V
GND ≤ V
Test Conditions
V
V
GND ≤ V
GND ≤ V
dd
dd
dd
dd
= Min, I
= Min, I
= Min., I
= Min., I
= Min., I
= Min., I
(Over Operating Range)
(Over Operating Range)
(Over Operating Range)
In
out
In
out
oh
ol
≤ V
In
out
≤ V
≤ V
≤ V
= 0.1 mA
= -0.1 mA
oh
ol
oh
ol
≤ V
dd
≤ V
dd
dd
= 8.0 mA
= 1.0 mA
= –4.0 mA
= –1.0 mA
dd
dd
, Outputs Disabled
dd
, Outputs Disabled
, Outputs Disabled
Integrated Silicon Solution, Inc. — www.issi.com
Min.
–0.2
1.4
1.4
–1
–1
Min.
–0.3
Min.
–0.3
2.4
1.8
2.0
–1
–1
–1
–1
2
V
dd
Max.
V
V
0.2
0.4
1
1
dd
dd
+ 0.2
Max.
Max.
0.4
0.8
0.4
0.8
1
1
1
1
+ 0.3
+ 0.3
Unit
Unit
Unit
08/10/09
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
V
V
Rev. I

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